Probe device

• US 7,667,474 B2
• Filed: 11/20/2007
• Issued: 02/23/2010
• Est. Priority Date: 11/21/2006
• Status: Expired due to Fees

• Current Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Original Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Inventors: Sunohara, Masahiro, Higashi, Mitsutoshi
• Primary Examiner(s): Karlsen; Ernest F
• Application Number:
  US11/984,601
• Publication Number:
  US 20080116925A1
• Time in Patent Office: 826 Days
• Field of Search: 324754-765
• US Class Current: 324/750.06
• CPC Class Codes: G01R 31/2875 related to heating

Abstract

A probe device includes a stage for fixing a semiconductor device having an external connection pad; a heating unit provided in the stage, for heating the semiconductor device to a predetermined temperature; and a probe card having a probe pin and a support substrate for supporting the probe pin, in which a resistance heating element is provided to the support substrate so as to heat a portion of the support substrate corresponding to a disposition portion of the probe pin to a temperature substantially equal to the predetermined temperature.

Claims

1. A probe device comprising:

a stage for fixing a semiconductor device having an external connection pad;

a heating unit provided in the stage, for heating the semiconductor device to a predetermined temperature;

a probe card having a plurality of probe pins and a support substrate for supporting the probe pins, the probe pins being to be brought in contact with the external connection pad of the semiconductor device heated to the predetermined temperature when said probe device performs an electrical inspection of the semiconductor device; and

a resistance heating element provided on a first surface of the support substrate, on which first surface the probe pins are disposed, in an area of the first surface surrounded by the probe pins, for heating a portion of the support substrate corresponding to a disposition portion of the probe pins to a temperature substantially equal to the predetermined temperature.

2. The probe device according to claim 1, further comprising:

a temperature detecting unit provided in the support substrate, for detecting the temperature at the portion of the support substrate corresponding to the disposition portion of the probe pins; and

a power control unit for controlling a power that is applied to the resistance heating element so that the temperature detected by the temperature detecting unit is substantially equal to the predetermined temperature.

3. The probe device according to claim 1, wherein the resistance heating element is provided on the first surface of the support substrate on which the probe pins is disposed and on a second surface of the support substrate opposite the first surface.

4. The probe device according to claim 1, wherein the resistance heating element is a wiring pattern formed by patterning a metallic film.

5. The probe device according to claim 1, wherein a thermal expansion coefficient of the support substrate is substantially equal to that of the semiconductor device.

6. The probe device according to claim 1, wherein the resistance heating element is provided on the first surface of the support substrate on which the probe pins are disposed, in the area of the first surface surrounded by the probe pins, and without being disposed on a location of the surface outside the area.