Surface emitting semiconductor device
First Claim
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1. A surface emitting semiconductor device comprising:
- a semiconductor region including an active layer, a first surface and a second surface, the first surface being opposite to the second surface, and the first surface, the active layer and the second surface being arranged in a direction of a predetermined axis;
a first distributed Bragg reflector including first layers and second layers, the first layers and second layers being alternately arranged in the direction of the predetermined axis, the first distributed Bragg reflector having a top surface and a bottom surface, the top surface and the bottom surface being arranged in the direction of the predetermined axis, the bottom surface of the first distributed Bragg reflector being in physical contact with the first surface, a shape of the bottom surface of the first distributed Bragg reflector being different from a shape of the first surface, and the first layers being made of dielectric material; and
a second distributed Bragg reflector, the first distributed Bragg reflector, the semiconductor region and the second distributed Bragg reflector being sequentially arranged along the predetermined axis;
wherein a cross section of the first distributed Bragg reflector is taken along a reference plane perpendicular to the predetermined axis, a distance between two points on an edge of the cross section takes a first value in a direction of an X-axis of a two-dimensional XY orthogonal coordinate system defined on the reference plane, a distance between two points on the edge takes a second value in a direction of a Y-axis of the two-dimensional XY orthogonal coordinate system, the first value is different from the second value, a cross section of the second distributed Bragg reflector is taken along another reference plane perpendicular to the predetermined axis, and a shape of the cross section of the first distributed Bragg reflector is different from a shape of the cross section of the second distributed Bragg reflector, whereinthe shape of the bottom surface of the first distributed Bragg reflector has an asymmetrical cross-section geometry by reference to an optical axis of the surface emitting semiconductor device, andthe first distributed Bragg reflector applies stress to the active layer through the bottom surface, the direction of the stress is associated with the asymmetrical cross-section geometry, and the stress is one of tensile stress and compressive stress.
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Abstract
A surface emitting semiconductor device comprises: a semiconductor region including an active layer; a first DBR having first layers and second layers; and a second DBR. The first and second layers are alternately arranged, and the first layers are made of dielectric material. The first DBR, semiconductor region and second DBR are sequentially arranged along a predetermined axis, and the semiconductor region is provided between the first DBR and the second DBR. The cross section of the first DBR is taken along a reference plane perpendicular to the predetermined axis. The distance between two points on an edge of the cross section takes a first value in a direction of an X-axis of a two-dimensional XY orthogonal coordinate system defined on the reference plane, and the distance between two points on the edge takes a second value in a direction of a Y-axis of the above coordinate system. The first value is different from the second value. The cross section of the second DBR is taken along another reference plane perpendicular to the predetermined axis, and a shape of the cross section of the first DBR is different from a shape of the cross section of the second DBR.
6 Citations
20 Claims
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1. A surface emitting semiconductor device comprising:
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a semiconductor region including an active layer, a first surface and a second surface, the first surface being opposite to the second surface, and the first surface, the active layer and the second surface being arranged in a direction of a predetermined axis; a first distributed Bragg reflector including first layers and second layers, the first layers and second layers being alternately arranged in the direction of the predetermined axis, the first distributed Bragg reflector having a top surface and a bottom surface, the top surface and the bottom surface being arranged in the direction of the predetermined axis, the bottom surface of the first distributed Bragg reflector being in physical contact with the first surface, a shape of the bottom surface of the first distributed Bragg reflector being different from a shape of the first surface, and the first layers being made of dielectric material; and a second distributed Bragg reflector, the first distributed Bragg reflector, the semiconductor region and the second distributed Bragg reflector being sequentially arranged along the predetermined axis; wherein a cross section of the first distributed Bragg reflector is taken along a reference plane perpendicular to the predetermined axis, a distance between two points on an edge of the cross section takes a first value in a direction of an X-axis of a two-dimensional XY orthogonal coordinate system defined on the reference plane, a distance between two points on the edge takes a second value in a direction of a Y-axis of the two-dimensional XY orthogonal coordinate system, the first value is different from the second value, a cross section of the second distributed Bragg reflector is taken along another reference plane perpendicular to the predetermined axis, and a shape of the cross section of the first distributed Bragg reflector is different from a shape of the cross section of the second distributed Bragg reflector, wherein the shape of the bottom surface of the first distributed Bragg reflector has an asymmetrical cross-section geometry by reference to an optical axis of the surface emitting semiconductor device, and the first distributed Bragg reflector applies stress to the active layer through the bottom surface, the direction of the stress is associated with the asymmetrical cross-section geometry, and the stress is one of tensile stress and compressive stress. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Current AssigneeSumitomo Electric Industries Limited (Sumitomo Corporation)
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Original AssigneeSumitomo Electric Industries Limited (Sumitomo Corporation)
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InventorsOnishi, Yutaka
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Primary Examiner(s)Harvey; Minsun
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Assistant Examiner(s)Stafford; Patrick
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Application NumberUS11/826,912Publication NumberTime in Patent Office950 DaysField of Search372/46.01, 372/96, 372/45US Class Current372/45.011CPC Class CodesB82Y 20/00 Nanooptics, e.g. quantum op...H01S 5/0421 characterised by the semico...H01S 5/18311 using selective oxidationH01S 5/18338 Non-circular shape of the s...H01S 5/18341 Intra-cavity contactsH01S 5/18355 having a defined polarisationH01S 5/18369 based on dielectric materialsH01S 5/34313 with a well layer having on...
