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Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals

  • US 7,670,469 B2
  • Filed: 09/26/2007
  • Issued: 03/02/2010
  • Est. Priority Date: 01/18/2000
  • Status: Expired due to Fees
First Claim
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1. A processing chamber for one or more integrated-circuit assemblies, comprising:

  • a vacuum chamber including a substrate holder, at least one sputtering target, a plasma power source;

    a gas emission device selectively connected to a plurality of gaseous material sources, a heater;

    a gas emission device disposed adjacent the sputtering target; and

    a non-reactive gas source disposed operatively to sweep non-reactive gas across the sputtering target to prevent contamination during operation of the gas emission device selectively connected to a plurality of gaseous material sources.

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