Plated pillar package formation

• US 7,670,874 B2
• Filed: 02/16/2007
• Issued: 03/02/2010
• Est. Priority Date: 02/16/2007
• Status: Expired due to Fees

• Current Assignee: Cufer Asset Ltd LLC (Intellectual Ventures LLC)
• Original Assignee: Cufer Asset Ltd LLC (Intellectual Ventures LLC)
• Inventors: Trezza, John
• Primary Examiner(s): Mulpuri; Savitri
• Assistant Examiner(s): Lee; Cheung
• Application Number:
  US11/675,731
• Publication Number:
  US 20080197508A1
• Time in Patent Office: 1,110 Days
• Field of Search: 438/41, 438/42, 438/44, 438/55, 438/642
• US Class Current: 438/106
• CPC Class Codes: H01L 21/4857 Multilayer substrates multilayer metallisation on monolayer substrate H01L21/4846
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method involves plating pillars of electrically conductive material up from a seed layer located on a substrate, surrounding the pillars with a fill material so that the pillars and fill material collectively define a first package, and removing the substrate from the first package.

Claims

1. A method of forming a package, the method comprising:

providing a first sacrificial layer on a substrate, wherein the substrate includes a first seed layer provided thereon;

forming openings in the first sacrificial layer to expose portions of the first seed layer;

plating the exposed portions of the first seed layer with a conductive metal to form pillars;

removing the first sacrificial layer;

providing a first fill material on the substrate adjacent the pillars, wherein an outer surface of the first fill material is planar to an upper surface of the pillars; and

removing the substrate.

2. The method of claim 1, further comprising forming the first seed layer on the substrate before the first sacrificial layer is formed.

3. The method of claim 2, wherein said forming the first seed layer comprises forming contacts and traces.

4. The method of claim 3, wherein said forming contacts and traces comprises metalizing the contacts and the traces.

5. The method of claim 4, wherein the first sacrificial layer is a photoresist.

6. The method of claim 5, wherein the first fill material is an insulator.

7. The method of claim 1, wherein said plating comprises electroplating or electroless-plating.

8. The method of claim 1, wherein at least some of the openings have a width of 50 μ

m or less.

9. The method of claim 8, wherein at least some of the openings have a pitch of 50 μ

m or less.

10. The method of claim 1, wherein at least some of the openings have a width of 20 μ

m or less.

11. The method of claim 10, wherein at least some of the openings have a pitch of 20 μ

m or less.

12. The method of claim 1, wherein a first set of the openings have a first width and a second set of the openings have a second width that differs from the first width.

13. The method of claim 1, further comprising:

providing a second seed layer over the pillars and the first fill material;

providing a second sacrificial layer over the second seed layer, the pillars, and the first fill material;

forming openings in the second sacrificial layer;

forming pillars in the openings of the second sacrificial layer;

removing the second sacrificial layer; and

providing a second fill material over the second seed layer and the first fill material.

14. The method of claim 1, wherein the first fill material comprises a curable or self-hardening material.

15. A method of forming a package, the method comprising:

metalizing at least a portion of a surface of a substrate to form a seed layer;

providing a photoresist over the seed layer and the substrate;

forming openings in the photoresist to expose portions of the seed layer;

plating the exposed portions of the seed layer with a conductive metal to form interconnects;

after said plating, removing the photoresist;

providing a fill material on the substrate adjacent the interconnects after removing the photoresist, wherein an outer surface of the fill material forms a substantially planar surface with an outer surface of the interconnects; and

removing the substrate.

16. The method of claim 15, wherein said metalizing comprises a vapor deposition process.

17. The method of claim 15, wherein said metalizing comprises forming contacts and traces.

18. The method of claim 17, wherein said forming contacts and traces comprises metalizing the contacts and the traces.

19. The method of claim 15, wherein the fill material is an insulator.

20. The method of claim 15, wherein said plating comprises electroplating or electroless-plating.

21. The method of claim 15, wherein at least some of the openings have a width of 50 μ

m or less and a pitch of 50 μ

m or less.

22. The method of claim 15, wherein at least some of the openings have a width of 20 μ

m or less and a pitch of 20 μ

m or less.

23. The method of claim 15, wherein a first set of the openings have a first width and a second set of the openings have a second width that differs from the first width.

24. The method of claim 15, wherein the fill material comprises a curable or self-hardening material.