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Method of fabricating strain-silicon CMOS

  • US 7,670,923 B1
  • Filed: 08/28/2008
  • Issued: 03/02/2010
  • Est. Priority Date: 03/31/2005
  • Status: Active Grant
First Claim
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1. A method of manufacturing a metal-oxide-semiconductor (“

  • MOS”

    ) transistor comprising;

    forming first sidewall spacers on the sides of a gate of the MOS transistor;

    performing a first anisotropic silicon etch in source and drain regions of the MOS transistor so as to form first recesses;

    depositing a second sidewall film on the MOS transistor;

    forming second sidewall spacers;

    performing a second anisotropic silicon etch in the source and drain regions of the MOS transistor so as to form second recesses, combined recesses being formed from at least the first recesses and the second recesses;

    removing the second sidewall spacers; and

    forming stressed material in the combined recesses.

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