Nano memory, light, energy, antenna and strand-based systems and methods

• US 7,671,398 B2
• Filed: 03/06/2006
• Issued: 03/02/2010
• Est. Priority Date: 02/23/2005
• Status: Expired due to Fees

• Current Assignee: Bao Tran
• Original Assignee: Bao Q. Tran
• Inventors: Tran, Bao Q.
• Primary Examiner(s): Coleman, W. David
• Assistant Examiner(s): Kim, Su C
• Application Number:
  US11/369,103
• Publication Number:
  US 20060198209A1
• Time in Patent Office: 1,457 Days
• Field of Search: 257/213, 257314-324, 257/415, 257/417, 257/E23.074, 257/E23.165, 977/724, 977/732, 977/733, 977/734, 977/742, 438/584
• US Class Current: 257/315
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: G11C 13/0014 comprising cells based on organic memory material
• CPC Class Codes: G11C 13/0019 comprising bio-molecules
• CPC Class Codes: G11C 13/02 using elements whose operation depends upon chemical change G11C13/0009 takes precedence
• CPC Class Codes: G11C 13/025 using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
• CPC Class Codes: G11C 13/04 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
• CPC Class Codes: G11C 2213/17 Memory cell being a nanowire transistor
• CPC Class Codes: G11C 2213/79 Array wherein the access device being a transistor
• CPC Class Codes: G11C 23/00 Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45164 Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/45169 Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/45173 Rhodium (Rh) as principal constituent
• CPC Class Codes: H01L 2224/45178 Iridium (Ir) as principal constituent
• CPC Class Codes: H01L 2224/48624 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 23/4952 the additional leads being a bump or a wire
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 27/14806 : Structural or functional details thereof
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01003 : Lithium [Li]
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01016 : Sulfur [S]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01038 : Strontium [Sr]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01044 : Ruthenium [Ru]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01052 : Tellurium [Te]
• CPC Class Codes: H01L 2924/01056 : Barium [Ba]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01061 : Promethium [Pm]
• CPC Class Codes: H01L 2924/01063 : Europium [Eu]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01083 : Bismuth [Bi]
• CPC Class Codes: H01L 2924/01094 : Plutonium [Pu]
• CPC Class Codes: H01L 2924/01105 : Rare earth metals
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12043 : Photo diode
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1433 : Application-specific integrated circuit [ASIC]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H10K 50/11 : characterised by the electroluminescent [EL] layers
• CPC Class Codes: Y10S 977/724 : Devices having flexible or movable element
• CPC Class Codes: Y10S 977/734 : Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.

Abstract

An apparatus includes a plurality of wash durable clothing strands; an array of nano electronic elements fabricated in the strands; and an array of memory elements coupled to the nano electronic elements. The nano electronic elements can include solar cells, display elements, or antennas, among others.

Claims

1. A nano device, comprising:

a. a first array of memory elements including ROM, PROM, EPROM, EEPROM, DRAM, SRAM, MRAM, FRAM, or SMM;

b. a second array of nano memory elements spin coated and vertically stacked with the first array of memory elements; and

c. a decoder coupled to the first and second arrays to select one of the memory elements.

2. The device of claim 1, wherein the nano memory elements are applied using a spin-coating technique.

3. The device of claim 1, comprising redundant memory elements to replace defective memory elements.

4. The device of claim 3, wherein the redundant memory elements are tested and each faulty memory element is deselected prior to operation.

5. The device of claim 3, wherein the nano memory elements self-organize to select functional memory elements and deselect defective memory elements.

6. The device of claim 3, wherein the nano memory elements comprise a neural network to detect defective memory elements using genetic algorithm.

7. The device of claim 1, wherein data is stored in one of:

a red-ox state, a physical deformation of the nano memory element, a charge stored across the nano memory element.

8. The device of claim 1, wherein the memory element comprises a nano-electro-mechanical system (NEMS).

9. The device of claim 1, wherein the memory element comprises a nanowire positioned above an electrode that, when actuated, performs one of:

deforming the nanowire, flattening the nanowire, attaches the wire to the electrode, repels the wire away from the electrode.

10. The device of claim 9, wherein the nano-wires form a two-dimensional (2D) nano-scale crossbar.

11. The device of claim 1, comprising light harvesting nanowires to capture solar energy.

12. The device of claim 1, comprising an energy storage device coupled to the light harvesting nanowires.

13. The device of claim 1, comprising light emitting nanowires.

14. The device of claim 1, comprising an energy storage device coupled to the light emitting nanowires.

15. The device of claim 1, comprising a wash durable strand of clothing containing the memory elements.

16. An apparatus, comprising:

a. a plurality of wash durable clothing strands;

b. an array of nano electronic elements fabricated in the strands; and

c. an array of memory elements including ROM, PROM, EPROM, EEPROM, DRAM, SRAM, MRAM, FRAM, or SMM coupled to the nano electronic elements.

17. The apparatus of claim 16, wherein the nano electronic elements comprises one of:

light emitting nanowires, light harvesting nanowires, an energy storage device, an antenna.

18. The apparatus of claim 16, comprising a processor coupled to the memory elements.

19. The apparatus of claim 16, wherein the nano-electronic elements substantially remain after the strand is washed at least 40 times in accordance with the wash procedure of AATCC Test Method 130-1981.

20. A nano device, comprising:

a wash durable material including a substrate having strands with void spaces in the strands and between the strands; and

nano-particles filling at least a part of the void spaces and forming one or more projections on the substrate, wherein the nano-particle comprises an array of light emitting elements and an array of light harvesting elements stacked vertically with the array of light emitting elements.