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Junction barrier Schottky (JBS) with floating islands

  • US 7,671,439 B2
  • Filed: 12/01/2006
  • Issued: 03/02/2010
  • Est. Priority Date: 02/11/2005
  • Status: Active Grant
First Claim
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1. A Schottky diode comprising:

  • a plurality of trenches opened in a N-type semiconductor substrate with a Schottky barrier material disposed in said each plurality of trenches;

    a plurality of P-type dopant regions disposed under said each plurality of trenches as floating islands in said semiconductor substrate as vertically implanted regions through said each plurality of trenches wherein each of said floating islands having a width substantially same or slightly broader than a width of said each plurality of trenches and substantially in vertical alignment with said each plurality of trenches.

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