Junction barrier Schottky (JBS) with floating islands
First Claim
1. A Schottky diode comprising:
- a plurality of trenches opened in a N-type semiconductor substrate with a Schottky barrier material disposed in said each plurality of trenches;
a plurality of P-type dopant regions disposed under said each plurality of trenches as floating islands in said semiconductor substrate as vertically implanted regions through said each plurality of trenches wherein each of said floating islands having a width substantially same or slightly broader than a width of said each plurality of trenches and substantially in vertical alignment with said each plurality of trenches.
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Accused Products
Abstract
A Schottky diode includes a Schottky barrier and a plurality of dopant regions disposed near the Schottky barrier as floating islands to function as PN junctions for preventing a leakage current generated from a reverse voltage. At least a trench opened in a semiconductor substrate with a Schottky barrier material disposed therein constitutes the Schottky barrier. The Schottky barrier material may also be disposed on sidewalls of the trench for constituting the Schottky barrier. The trench may be filled with the Schottky barrier material composed of Ti/TiN or a tungsten metal disposed therein for constituting the Schottky barrier. The trench is opened in a N-type semiconductor substrate and the dopant regions includes P-doped regions disposed under the trench constitute the floating islands. The P-doped floating islands may be formed as vertical arrays under the bottom of the trench.
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Citations
16 Claims
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1. A Schottky diode comprising:
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a plurality of trenches opened in a N-type semiconductor substrate with a Schottky barrier material disposed in said each plurality of trenches; a plurality of P-type dopant regions disposed under said each plurality of trenches as floating islands in said semiconductor substrate as vertically implanted regions through said each plurality of trenches wherein each of said floating islands having a width substantially same or slightly broader than a width of said each plurality of trenches and substantially in vertical alignment with said each plurality of trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A Schottky diode comprising:
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a plurality of trenches opened in a P-type semiconductor substrate with a Schottky barrier material disposed in said each plurality of trenches; a plurality of N-type dopant regions disposed under said each plurality of trenches as floating islands in said semiconductor substrate as vertically implanted regions through said each plurality of trenches wherein each of said floating islands having a width substantially same or slightly broader than a width of said each plurality of trenches and substantially in vertical alignment with said each plurality of trenches. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification