Buried via technology for three dimensional integrated circuits

• US 7,671,460 B2
• Filed: 01/18/2007
• Issued: 03/02/2010
• Est. Priority Date: 01/25/2006
• Status: Expired due to Fees

• Current Assignee: Teledyne Scientific & Imaging, LLC (Teledyne Technologies Incorporated)
• Original Assignee: Teledyne Licensing, LLC (Teledyne Technologies Incorporated)
• Inventors: Lauxtermann, Stefan C., DeNatale, Jeffrey F.
• Primary Examiner(s): Blum, David S
• Application Number:
  US11/624,633
• Publication Number:
  US 20070170574A1
• Time in Patent Office: 1,139 Days
• Field of Search: 257/686, 257/678, 257/E23.085
• US Class Current: 257/686
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

A three dimensional integrated circuit and method for making the same. The three dimensional integrated circuit has a first and a second active circuit layers with a first metal layer and a second metal layer, respectively. The metal layers are connected by metal inside a buried via. The fabrication method includes etching a via in the first active circuit layer to expose the first metal layer without penetrating the first metal layer, depositing metal inside the via, the metal inside the via being in contact with the first metal layer, and bonding the second active circuit layer to the first active circuit layer using a metal bond that connects the metal inside the via to the second metal layer of the second active circuit layer.

Claims

1. A three dimensional integrated circuit comprising:

a first active circuit layer deposited on a substrate wafer;

a second active circuit layer coupled to the first active circuit layer, the second active circuit layer having a via and a first metal layer, the first metal layer is embedded in a first dielectric material in the second active circuit layer, the via is etched through the first dielectric material to expose the first metal layer, the via contains metal in contact with the first metal layer of the second active circuit layer; and

a third active circuit layer having a second metal layer, the second metal layer is embedded in a second dielectric material in the third active circuit layer, the second dielectric material has an opening that exposes the second metal layer of the third active circuit layer, the opening is aligned above the via of the second active circuit layer, the opening contains a metal bond that mechanically couples the third active circuit layer to the second active circuit layer, and the metal of the via electrically couples the first metal layer of the second active circuit layer to the second metal layer of the third active circuit layer, the third active circuit layer having a third metal layer located above the second metal layer, wherein the via does not contact and interrupt routing of the third metal layer.

2. The three dimensional integrated circuit of claim 1, wherein the second active circuit layer is coupled to the first active circuit layer using a bond material selected from a group consisting of indium, gold and solder.

3. The three dimensional integrated circuit of claim 1, wherein the second active circuit layer is coupled to the first active circuit layer using an under fill.

4. The three dimensional integrated circuit of claim 1, wherein the third active circuit layer is coupled to the second active circuit layer using an under fill.

5. The three dimensional integrated circuit of claim 1, wherein the metal bond is selected from a group consisting of indium, gold and solder.

6. The three dimensional integrated circuit of claim 1, wherein the first active circuit layer is about 5 μ

m thick.

7. The three dimensional integrated circuit of claim 1, wherein the via is about 5 μ

m deep.

8. The three dimensional integrated circuit of claim 1, wherein the via has an aspect ratio less than or equal to 20.

9. The three dimensional integrated circuit of claim 1, wherein the first metal layer and the second metal layer are each about 1 μ

m thick.

10. The three dimensional integrated circuit of claim 1, wherein the second active circuit layer further includes a wafer layer and a buried oxide layer, the via is etched through the buried oxide layer and the wafer layer to expose the first metal layer without penetrating the first metal layer.

11. A three dimensional integrated circuit comprising:

a circuit layer deposited on a substrate wafer;

a first known good die coupled to the circuit layer, the first known good die has a via and a first metal layer, the first metal layer is embedded in a first dielectric material of the first known good die, the via is etched through the first dielectric material to expose the first metal layer, the via contains metal in contact with the first metal layer; and

a second known good die coupled to the first known good die, the second known good die has a second metal layer, the second metal layer is embedded in a second dielectric material of the second known good die, the second dielectric material has an opening that exposes the second metal layer, the opening is aligned above the via of the first known good die, the opening contains a metal bond that mechanically couples the second known good die to the first known good die and the metal of the via electrically couples the first metal layer to the second metal layer, the second known good die having a third metal layer located above the second metal layer, wherein the via does not contact and interrupt routing of the third metal layer.

12. The three dimensional integrated circuit of claim 11, wherein the first known good die is coupled to the circuit layer using a bond material selected from a group consisting of indium, gold and solder.

13. The three dimensional integrated circuit of claim 11, wherein the first known good die is coupled to the first active circuit layer using an under fill.

14. The three dimensional integrated circuit of claim 11, wherein the metal bond is selected from a group consisting of indium, gold and solder.

15. The three dimensional integrated circuit of claim 11, wherein the circuit layer is about 5 μ

m thick.

16. The three dimensional integrated circuit of claim 11, wherein the via is about 5 μ

m deep.

17. The three dimensional integrated circuit of claim 11, wherein the via has an aspect ratio less than or equal to 20.

18. The three dimensional integrated circuit of claim 11, wherein the first metal layer and the second metal layer are each about 1 μ

m thick.

19. The three dimensional integrated circuit of claim 11, wherein the first known good die further includes a wafer layer and a buried oxide layer, the via is etched through the buried oxide layer and the wafer layer to expose the first metal layer.