Touch panel and method for manufacturing the same

• US 7,671,847 B2
• Filed: 01/06/2006
• Issued: 03/02/2010
• Est. Priority Date: 01/07/2005
• Status: Active Grant

• Current Assignee: AU Optronics Corporation
• Original Assignee: AU Optronics Corporation
• Inventors: Weng, Chien-Sen
• Primary Examiner(s): Hjerpe; Richard
• Assistant Examiner(s): Said; Mansour M
• Application Number:
  US11/326,438
• Publication Number:
  US 20060152500A1
• Time in Patent Office: 1,516 Days
• Field of Search: 345/60, 345/76, 345/87, 345/156, 345/166, 345/168, 345169-170, 345172-177, 349/12, 349/23, 349/160, 178/18.01, 178/19.01
• US Class Current: 345/173
• CPC Class Codes: G06F 3/045 using resistive elements, e.g. a single continuous surface or two parallel surfaces put in contact

Abstract

A touch panel for an electronic apparatus is provided. The touch panel comprises a thin film transistor substrate, a plurality of conductive islets, a supporting pattern layer and an elastic conductive film. The plurality of conductive islets is formed on the thin film transistor substrate. The supporting pattern layer is formed above the thin film transistor substrate. The supporting pattern layer has a plurality of apertures. Each of the plurality of apertures for exposing at least part of each of the plurality of conductive islets. The elastic conductive film is formed on the supporting pattern layer.

Claims

1. A touch panel for an electronic apparatus, comprising:

a thin film transistor substrate;

a plurality of conductive islets formed on the thin film transistor substrate;

a supporting pattern layer, formed above the thin film transistor substrate, having a plurality of apertures for exposing at least part of each of the plurality of conductive islets;

at least one conductive protrusion formed in at least part of the plurality of apertures and formed on at least part of each of the plurality of conductive islets, wherein the thickness of the supporting pattern layer is substantially greater than the thickness of the conductive protrusion; and

an elastic conductive film formed on the supporting pattern layer.

2. The touch panel of claim 1, further comprising:

an auxiliary protective layer formed below the supporting pattern layer.

3. The touch panel of claim 1, wherein the supporting pattern layer is transparent, translucent, or opaque.

4. The touch panel of claim 1, wherein the supporting pattern layer comprises polycarbonate (PC), benzocyclobutene (BCB), acryl organic material, fluorine-added polyimide, a compound consisting of silicon, carbon and oxygen (SixOyCn), Teflon, Parylene, a silicon compound consisting of carbon, hydrogen, oxygen, a silicon compound consisting of nitride, oxide or both of nitride and oxide, an phosphosilicate glass (PSG) doped with ions, a metal oxide, or combinations thereof.

5. The touch panel of claim 1, wherein the conductive islet comprises indium-tin oxide, indium-zinc oxide, oxide, gold, aluminum, platinum, palladium, copper, molybdenum, titanium, aluminum, conductive rubber, or combinations thereof.

6. The touch panel of claim 1, wherein the conductive protrusion comprises indium-tin oxide, indium-zinc oxide, oxide, gold, aluminum, platinum, palladium, copper, molybdenum, titanium, aluminum, conductive rubber, or combinations thereof.

7. The touch panel of claim 1, wherein the shape of each of the plurality of apertures is rhombus, square, circle, oval, or polygon.

8. The touch panel of claim 1, wherein the shape of the conductive protrusion is substantially corresponding to the shape of the apertures.

9. A method for manufacturing a touch panel, comprising:

providing a thin film transistor substrate;

forming at least one conductive islet on the thin film transistor substrate;

forming a supporting pattern layer, having a plurality of apertures, above the thin film transistor substrate for exposing at least part of the conductive islet;

forming at least one conductive protrusion in at least part of each of the plurality of apertures and on at least part of the conductive islet, so that the thickness of the supporting pattern layer is substantially greater than the thickness of the conductive protrusion; and

forming an elastic conductive film on the supporting pattern layer.

10. The method of claim 9, wherein formation of the supporting pattern layer comprises:

forming an insulating material layer over the thin film transistor substrate; and

removing a predetermined portion of the insulating material layer to form the plurality of apertures.

11. The method of claim 10, wherein the insulating material layer comprises polycarbonate (PC), benzocyclobutene (BCB), acryl organic material, fluorine-added polyimide, a compound consisting of silicon, carbon and oxygen (SixOyCn), Teflon, Parylene, a silicon compound consisting of carbon, hydrogen, oxygen, a silicon compound consisting of nitride, oxide, or both of nitride and oxide, an phosphosilicate glass (PSG) doped with ions, a metal oxide, or combinations thereof.

12. The method of claim 9, further comprising:

forming an auxiliary protective layer on the supporting pattern layer.

13. The method of claim 9, wherein the conductive islet comprises indium-tin oxide, indium-zinc oxide, oxide, gold, aluminum, platinum, palladium, copper, molybdenum, titanium, aluminum, conductive rubber, or combinations thereof.

14. The method of claim 9, wherein the conductive protrusion comprises indium-tin oxide, indium-zinc oxide, oxide, gold, aluminum, platinum, palladium, copper, molybdenum, titanium, aluminum, conductive rubber, or combinations thereof.