Method of manufacturing a semiconductor device

• US 7,674,635 B2
• Filed: 07/31/2006
• Issued: 03/09/2010
• Est. Priority Date: 03/19/2001
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hiroki, Masaaki, Yamazaki, Shunpei
• Primary Examiner(s): TSAI, H JEY
• Application Number:
  US11/496,310
• Publication Number:
  US 20060263952A1
• Time in Patent Office: 1,317 Days
• Field of Search: 438/14, 438/17, 438149-156, 257/E21.524
• US Class Current: 438/14
• CPC Class Codes: G01R 31/2601 Apparatus or methods therefor G01R31/2607, G01R31/2642 take precedence
• CPC Class Codes: G01R 31/2607 Circuits therefor G01R31/2642 takes precedence
• CPC Class Codes: G01R 31/3025 Wireless interface with the DUT
• CPC Class Codes: G09G 3/006 Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays testing individual LED's G01R31/2635; testing lamps G01R31/44; testing of optical features of LCD displays G02F1/1309
• CPC Class Codes: H01L 22/14 for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors

Abstract

The present invention supplies a manufacturing method of a semiconductor device, which includes a non-contact inspection process capable of confirming if a circuit or circuit element formed on an array substrate is normally performed and can decrease a manufacturing cost by eliminating wastes to keep a defective product forming.

An electromotive force generated by electromagnetic induction is rectified and shaped by using primary coils formed on a check substrate and secondary coils formed on an array substrate, whereby a power source voltage and a driving signal are supplied to circuits or circuit elements on a TFT substrate so as to be driven.

Claims

1. A method of manufacturing a semiconductor device comprising:

providing a semiconductor device comprising a plurality of thin film transistors over a substrate;

providing a secondary coil over said substrate;

providing a waveform shaping circuit and a rectifier circuit over said substrate;

keeping an interval between a primary coil and said secondary coil of said substrate;

applying a voltage between two terminals of said primary coil;

inducing an AC voltage in said secondary coil by electromagnetic induction;

rectifying said AC voltage to form pulsating voltages with different phases by said rectifier circuit;

forming a driving signal by said waveform shaping circuit and said rectifier circuit from said AC voltage;

smoothing said pulsating voltages to be used as a power source voltage after rectifying said AC voltage;

supplying said driving signal and said power source voltage to said semiconductor device to drive said semiconductor device;

detecting an electric field created by said semiconductor device as a result of supplying said driving signal thereto in order to decide whether said semiconductor device correctly operates or not, and

wherein said electric field is measured by using an antenna,

wherein each of said pulsating voltages after rectifying said AC voltage, has 0 or a value having one polarity on a semi-period basis, and

wherein said pulsating voltages with different phases are combined with each other to generate said power source voltage after rectifying said AC voltage.

9. The method according to claim 1, wherein said antennas has a measurement frequency band of 1 MHz to 1 GHz.

11. The method according to claim 1 further comprising analyzing detected information by an image processing apparatus.

15. The method according to claim 1 further comprising electrically separating said plurality of semiconductor elements from the at least one secondary coil.

19. The method according to claim 1, wherein said waveform shaping circuit is electrically connected with secondary coils over said substrate.

23. The method according to claim 1, further comprising electrically connecting said plurality of secondary coil with said waveform shaping circuit or said rectifier circuit.

27. The method according to claim 1, wherein said substrate is a plastic substrate.

2. A method of manufacturing a semiconductor device comprising:

providing a semiconductor device comprising a plurality of thin film transistors over a substrate;

providing a secondary coil over said substrate;

providing a rectifier circuit over said substrate;

inducing an AC voltage in said secondary coil by electromagnetic induction;

rectifying said AC voltage to form pulsating voltages with different phases by said rectifier circuit;

forming a driving signal by said rectifier circuit from said AC voltage;

smoothing said pulsating voltages to be used as a power source voltage after rectifying said AC voltage;

supplying said driving signal and said power source voltage to said semiconductor device to drive said semiconductor device;

detecting an electric field created by said semiconductor device as a result of supplying said driving signal thereto in order to decide whether said semiconductor device correctly operates or not,

wherein each of said pulsating voltages after rectifying said AC voltage, has 0 or a value having one polarity on a semi-period basis, and

wherein said pulsating voltages with different phases are combined with each other to generate said power source voltage after rectifying said AC voltage.

5. The method according to claim 2 further comprising keeping an interval between a primary coil and said secondary coil of said substrate, and

applying a voltage between two terminals of said primary coil.

7. The method according to claim 2, wherein said electric field is measured by using an antenna.

12. The method according to claim 2 further comprising analyzing detected information by an image processing apparatus.

16. The method according to claim 2 further comprising electrically separating said plurality of semiconductor elements from the at least one secondary coil.

20. The method according to claim 2, wherein said rectifier circuit is electrically connected with secondary coils over said substrate.

24. The method according to claim 2, further comprising electrically connecting said plurality of secondary coil with said waveform shaping circuit or said rectifier circuit.

28. The method according to claim 2, wherein said substrate is a plastic substrate.

3. A method of manufacturing a semiconductor device comprising:

providing a semiconductor device comprising a plurality of semiconductor elements arranged in a matrix over a substrate;

providing a secondary coil over said substrate;

providing a waveform shaping circuit and a rectifier circuit over said substrate;

keeping an interval between a primary coil and said secondary coil of said substrate;

applying a voltage between two terminals of said primary coil;

inducing an AC voltage in said secondary coil by electromagnetic induction;

rectifying said AC voltage to form pulsating voltages with different phases by said rectifier circuit;

forming a driving signal by said waveform shaping circuit and said rectifier circuit from said AC voltage;

smoothing said pulsating voltages to be used as a power source voltage after rectifying said AC voltage;

supplying said driving signal to said semiconductor device to drive said semiconductor device;

detecting a defect in said plurality of semiconductor elements by observing an electric field generated at each of said plurality of semiconductor elements,

wherein said electric field is measured by using an antenna,

wherein each of said pulsating voltages after rectifying said AC voltage, has 0 or a value having one polarity on a semi-period basis, and

wherein pulsating voltages with different phases are combined with each other to generate said power source voltage after rectifying said AC voltage.

10. The method according to claim 3, wherein said antennas has a measurement frequency band of 1 MHz to 1 GHz.

13. The method according to claim 3 further comprising analyzing detected information by an image processing apparatus.

17. The method according to claim 3 further comprising electrically separating said plurality of semiconductor elements from the at least one secondary coil.

21. The method according to claim 3, wherein said waveform shaping circuit is electrically connected with secondary coils over said substrate.

25. The method according to claim 3, further comprising electrically connecting said plurality of secondary coil with said waveform shaping circuit or said rectifier circuit.

29. The method according to claim 3, wherein said substrate is a plastic substrate.

4. A method of manufacturing a semiconductor device comprising:

providing a semiconductor device comprising a plurality of semiconductor elements arranged in a matrix over a substrate;

providing a secondary coil over said substrate;

providing a rectifier circuit over said substrate;

inducing an AC voltage in said secondary coil by electromagnetic induction;

rectifying said AC voltage to form pulsating voltages with different phases by said rectifier circuit;

forming a driving signal by said rectifier circuit from said AC voltage;

smoothing said pulsating voltages to be used as a power source voltage after rectifying said AC voltage;

supplying said driving signal and said power source voltage to said semiconductor device to drive said semiconductor device;

detecting a defect in said plurality of semiconductor elements by observing an electric field generated at each of said plurality of semiconductor elements,

wherein each of said pulsating voltages after rectifying said AC voltage, has 0 or a value having one polarity on a semi-period basis, and

wherein said pulsating voltages with different phases are combined with each other to generate said power source voltage after rectifying said AC voltage.

6. The method according to claim 4 further comprising keeping an interval between a primary coil and said secondary coil of said substrate, and

applying a voltage between two terminals of said primary coil.

8. The method according to claim 4, wherein said electric field is measured by using an antenna.

14. The method according to claim 4 further comprising analyzing detected information by an image processing apparatus.

18. The method according to claim 4 further comprising electrically separating said plurality of semiconductor elements from the at least one secondary coil.

22. The method according to claim 4, wherein said rectifier circuit is electrically connected with secondary coils over said substrate.

26. The method according to claim 4, further comprising electrically connecting said plurality of secondary coil with said waveform shaping circuit or said rectifier circuit.

30. The method according to claim 4, wherein said substrate is a plastic substrate.