×

GaN based LED with etched exposed surface for improved light extraction efficiency and method for making the same

  • US 7,674,639 B2
  • Filed: 08/14/2006
  • Issued: 03/09/2010
  • Est. Priority Date: 08/14/2006
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method for making a light-emitting diode LED comprising:

  • fabricating a light-emitting structure on a substrate, said light emitting structure comprising an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, said active layer emitting light of a predetermined wavelength when electrons and holes from said n-type GaN layer and said p-type GaN layer, respectively, combine therein, said light-emitting structure exposing a Ga-face of said p-type GaN on an exposed surface thereof;

    depositing a p-type GaN transition structure on said exposed surface, said transition structure having an exposed N-face on an exposed surface thereof; and

    etching said exposed N-face of said transition structure to generate features that scatter light of said predetermined wavelength.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×