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Process for making thin film field effect transistors using zinc oxide

  • US 7,674,662 B2
  • Filed: 07/19/2006
  • Issued: 03/09/2010
  • Est. Priority Date: 07/19/2006
  • Status: Expired due to Fees
First Claim
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1. A method for forming a thin film transistor, comprising:

  • blanket depositing a zinc oxide layer over an entire substrate surface;

    depositing a conductive metal layer over the zinc oxide layer;

    depositing a mask;

    etching the conductive metal layer and zinc oxide layer in a first etching step in a single process with the same etchant using the mask to expose a gate dielectric layer;

    removing the mask; and

    thenpatterning and etching the conductive metal layer in a second etching step to expose the zinc oxide layer and define source and drain electrodes.

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