Method for producing a transistor component having a field plate
First Claim
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1. A method for producing a transistor component having a field plate, comprising:
- providing a semiconductor body having a first side and having at least one first trench extending into the semiconductor body proceeding from the first side;
producing a field plate dielectric layer on the first side and at uncovered areas of the first trench in such a way that a residual trench remains;
producing a field plate layer in the residual trench, including applying an electrically conductive layer on the field plate dielectric layer in such a way that the residual trench is completely filled, wherein the electrically conductive layer is applied in such a way that it covers the field plate dielectric layer above the first side of the semiconductor body;
uncovering the first side of the semiconductor body by using a polishing method, wherein the electrically conductive layer is partially removed during the polishing method, such that the field plates are formed in the residual trenches; and
partially removing the field plate dielectric layer from the at least one first trench proceeding from the first side.
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Abstract
A method for producing a transistor component having a field plate. One embodiment includes providing a semiconductor body having a first side, and including a first trench extending into the semiconductor body. A field plate dielectric layer is produced on the first side and at uncovered areas of the first trench such that a residual trench remains. A field plate layer is produced in the residual trench. The first side of the semiconductor body is uncovered using a polishing method. The field plate dielectric layer is partially removed from the at least one first trench proceeding from the first side.
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Citations
16 Claims
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1. A method for producing a transistor component having a field plate, comprising:
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providing a semiconductor body having a first side and having at least one first trench extending into the semiconductor body proceeding from the first side; producing a field plate dielectric layer on the first side and at uncovered areas of the first trench in such a way that a residual trench remains; producing a field plate layer in the residual trench, including applying an electrically conductive layer on the field plate dielectric layer in such a way that the residual trench is completely filled, wherein the electrically conductive layer is applied in such a way that it covers the field plate dielectric layer above the first side of the semiconductor body; uncovering the first side of the semiconductor body by using a polishing method, wherein the electrically conductive layer is partially removed during the polishing method, such that the field plates are formed in the residual trenches; and partially removing the field plate dielectric layer from the at least one first trench proceeding from the first side. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for producing a transistor component having a field plate, comprising:
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providing a semiconductor body having a first side and having at least one first trench extending into the semiconductor body proceeding from the first side; producing a field plate dielectric layer on the first side and at uncovered areas of the first trench in such a way that a residual trench remains; producing a field plate layer in the residual trench; uncovering the first side of the semiconductor body by using a polishing method; and partially removing the field plate dielectric layer from the at least one first trench proceeding from the first side wherein at least two trenches are produced, and wherein producing the field plate layer in the at least one first trench comprises; producing a first partial layer composed of an electrically conductive material which partially fills the residual trench of the at least one first trench and which forms a field plate; producing a second partial layer composed of a dielectric material which fills the residual trench at least as far as the level of the first side of the semiconductor body; and producing a field plate layer in at least one second trench including filling a residual trench of the at least one second trench with an electrically conductive material at least as far as the level of the first side of the semiconductor body; wherein filling the residual trench of the at least one first trench and of the at least one second trench with an electrically conductive material comprises; producing a material layer composed of an electrically conductive material which completely covers the field plate dielectric layer; and removing the material layer composed of the electrically conductive material at least from those regions of the field plate dielectric layer above the first side of the semiconductor body during the polishing process. - View Dependent Claims (9)
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10. A method for making an integrated circuit including a transistor component comprising:
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providing a semiconductor body having a first side and a first trench extending from the first side into the semiconductor body; producing a field plate dielectric layer on the first side and at uncovered areas of the first trench such that residual trench remains; producing a field plate layer in the residual trench, including applying an electrically conductive layer on the field plate dielectric layer in such a way that the residual trench is completely filled, wherein the electrically conductive layer is applied in such a way that it covers the field plate dielectric layer above the first side of the semiconductor body, and wherein the electrically conductive layer is partially removed during a polishing method, such that field plates are formed in the residual trenches; and partially removing the field plate dielectric layer from the at least one first trench by the polishing method. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification