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Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device

  • US 7,675,075 B2
  • Filed: 08/09/2004
  • Issued: 03/09/2010
  • Est. Priority Date: 08/28/2003
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device comprising:

  • a base substrate made of a highly heat-conductive material; and

    a pair of power supply terminal thin-film layers, each being provided on different areas of a first main surface of the base substrate, and the pair of power supply terminal thin-film layers being electrically connected to each other via first and second through holes provided in the base substrate, whereina second main surface of the base substrate has provided thereon a semiconductor multilayer epitaxial structure including a first conductive layer, a light emitting layer, and a second conductive layer formed in the stated order,the multilayer epitaxial structure is mounted on the base substrate in such a manner that a last epitaxially-grown layer having a structure characteristic of being grown on a single-crystal substrate different from the base substrate is positioned closer to the base substrate than a portion of a first epitaxially-grown layer,a first electrode thin-film layer is in contact with the first conductive layer,a second electrode thin-film layer is in contact with the second conductive layer,a phosphor film covers the semiconductor multilayer epitaxial structure, anda first thin-film layer and a second thin-film layer electrically connect the first electrode thin-film layer and the second electrode thin-film layer respectively via the through-holes,wherein the base substrate is made of one of SiC, AlN, GaN, BN, Si, and sapphire.

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