Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device

• US 7,675,075 B2
• Filed: 08/09/2004
• Issued: 03/09/2010
• Est. Priority Date: 08/28/2003
• Status: Active Grant

• Current Assignee: Satco Products Incorporated
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Nagai, Hideo
• Primary Examiner(s): Huynh; Andy
• Assistant Examiner(s): HO, HOANG QUAN TRAN
• Application Number:
  US10/567,510
• Publication Number:
  US 20060284195A1
• Time in Patent Office: 2,038 Days
• Field of Search: None
• US Class Current: 257/90
• CPC Class Codes: F21K 9/00 Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/82005 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/92244 the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 24/18 High density interconnect [HDI] connectors; Manufacturing methods related thereto interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/15787 Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 : the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 : with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/50 : Wavelength conversion elements
• CPC Class Codes: H01L 33/505 : characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An LED array chip (2), which is one type of a semiconductor light emitting device, includes an array of LEDs (6), a base substrate (4) supporting the array of the LEDs (6), and a phosphor film (48). The array of LEDs (6) is formed by dividing a multilayer epitaxial structure including a light emitting layer into a plurality of portions. The phosphor film (48) covers an upper surface of the array of the LEDs (6) and a part of every side surface of the array of LEDs (6). Here, the part extends from the upper surface to the light emitting layer.

Claims

1. A semiconductor light emitting device comprising:

a base substrate made of a highly heat-conductive material; and

a pair of power supply terminal thin-film layers, each being provided on different areas of a first main surface of the base substrate, and the pair of power supply terminal thin-film layers being electrically connected to each other via first and second through holes provided in the base substrate, wherein

a second main surface of the base substrate has provided thereon a semiconductor multilayer epitaxial structure including a first conductive layer, a light emitting layer, and a second conductive layer formed in the stated order,

the multilayer epitaxial structure is mounted on the base substrate in such a manner that a last epitaxially-grown layer having a structure characteristic of being grown on a single-crystal substrate different from the base substrate is positioned closer to the base substrate than a portion of a first epitaxially-grown layer,

a first electrode thin-film layer is in contact with the first conductive layer,

a second electrode thin-film layer is in contact with the second conductive layer,

a phosphor film covers the semiconductor multilayer epitaxial structure, and

a first thin-film layer and a second thin-film layer electrically connect the first electrode thin-film layer and the second electrode thin-film layer respectively via the through-holes,

wherein the base substrate is made of one of SiC, AlN, GaN, BN, Si, and sapphire.

2. The semiconductor light emitting device of claim 1, wherein

the multilayer epitaxial structure is formed on the base substrate leaving a space along each edge of the second main surface of the base substrate which faces the multilayer epitaxial structure;

and

the first through hole and the second through hole are provided in a peripheral portion of the base substrate, the peripheral portion corresponding to the space.

3. The semiconductor light emitting device of claim 1, further comprising:

a metal reflective film that is sandwiched between the multilayer epitaxial structure and the base substrate.

4. The semiconductor light emitting device of claim 1, wherein

the first and the second through holes are positioned in a periphery of the base substrate, and

the multilayer epitaxial structure is not positioned on or over the first and second through holes.

5. The semiconductor light emitting device of claim 1, wherein

the phosphor layer covers an entirety of the base substrate, including surrounding edge portions of the base substrate, and

a peripheral lateral surface of the base substrate and a peripheral lateral surface of the phosphor layer are a continuous surface.

6. A semiconductor light emitting device comprising:

a base substrate made of a highly heat-conductive material; and

a pair of power supply terminal thin-film layers, each being provided on different areas of a first main surface of the base substrate, and the pair of power supply terminal thin-film layers being electrically connected to each other via first and second through holes provided in the base substrate, wherein

a second main surface of the base substrate has provided thereon a semiconductor multilayer epitaxial structure including a first conductive layer, a light emitting layer, and a second conductive layer formed in the stated order,

the multilayer epitaxial structure is mounted on the base substrate in such a manner that a last epitaxially-grown layer having a structure characteristic of being grown on a single-crystal substrate different from the base substrate is positioned closer to the base substrate than a portion of a first epitaxially-grown layer,

a first electrode thin-film layer is in contact with the first conductive layer,

a second electrode thin-film layer is in contact with the second conductive layer,

a phosphor film covers the semiconductor multilayer epitaxial structure, and

a first thin-film layer and a second thin-film layer electrically connect the first electrode thin-film layer and the second electrode thin-film layer respectively via the through-holes,

wherein the base substrate is made of a highly-resistive semiconductor material.

7. The semiconductor light emitting device of claim 6, wherein

the multilayer epitaxial structure is formed on the base substrate leaving a space along each edge of a the second main surface of the base substrate which faces the multilayer epitaxial structure;

and

the first through hole and the second through hole are provided in a peripheral portion of the base substrate, the peripheral portion corresponding to the space.

8. The semiconductor light emitting device of claim 6, further comprising:

a metal reflective film that is sandwiched between the multilayer epitaxial structure and the base substrate.

9. The semiconductor light emitting device of claim 6, wherein

the first and the second through holes are positioned in a periphery of the base substrate, and

the multilayer epitaxial structure is not positioned on or over the first and second through holes.

10. The semiconductor light emitting device of claim 6, wherein

the phosphor layer covers an entirety of the base substrate, including surrounding edge portions of the base substrate, and

a peripheral lateral surface of the base substrate and a peripheral lateral surface of the phosphor layer are a continuous surface.