Diamond coating of silicon-carbide LEDs

• US 7,675,079 B1
• Filed: 10/27/2005
• Issued: 03/09/2010
• Est. Priority Date: 10/28/2004
• Status: Expired due to Fees

• Current Assignee: Victor B. Kley
• Original Assignee: Victor B. Kley
• Inventors: Kley, Victor B.
• Primary Examiner(s): Bryant; Kiesha R.
• Assistant Examiner(s): Yang; Minchul
• Application Number:
  US11/261,458
• Time in Patent Office: 1,594 Days
• Field of Search: 257/79, 257/74, 257/94, 257/95, 257/98, 257/E33.013, 257/E33.015, 257/E33.016, 257/E33.036, 257/E33.06, 257/E33.061, 257/E33.068, 257/E33.074, 438/33, 438/34, 438/35, 438 25- 29
• US Class Current: 257/98
• CPC Class Codes: H01L 33/34 containing only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/64 Heat extraction or cooling elements

Abstract

In silicon-carbide based light emitting diodes (LEDs) and other similar applications, diamond crystals are used to provide an intermediate refractive index that permits more of the ultraviolet light generated in the diode to reach the phosphors, producing a brighter light with greater efficiency.

Claims

1. A silicon-carbide-based LED comprising:

a silicon carbide crystal diode adapted to generate light;

a diamond coating grown on a surface of the silicon carbide crystal diode, the diamond coating consisting of diamond; and

a phosphor layer disposed such that the diamond coating is between the silicon carbide crystal and at least a portion of the phosphor layer,

wherein the diamond coating provides a region having an index of refraction intermediate between an index of refraction of the silicon carbide crystal diode and an index of refraction of the phosphor layer.

2. The LED of claim 1, further comprising:

a silicon nitride layer disposed between the diamond coating and the phosphor layer,

wherein the silicon nitride layer has a further reduced index of refraction relative to the diamond layer.

3. The LED of claim 1 further comprising:

at least one coating layer disposed between the diamond coating and the phosphor layer;

wherein materials and arrangement of the coating layers reduce by steps the index of refraction so as to match that of the phosphor layer.

4. The LED of claim 1 wherein the diamond coating comprises a plurality of diamond crystals.

5. The LED of claim 4 wherein the diamond crystals have an average size in a range from about 1 nanometer to about 10 microns.

6. The LED of claim 1 wherein thermal properties of diamond are used to improve power consumption or reduce an operating temperature of the device.

7. The LED of claim 1 wherein electrical properties of diamond are used to isolate device regions from or to electrically connect device regions with outside sensors or power supplies.

8. The LED of claim 1 wherein the diamond coating consists essentially of polycrystalline diamond.

9. The LED of claim 1 wherein the diamond coating consists essentially of nanocrystalline diamond.

10. A silicon-carbide-based LED for directing light to a target, the LED comprising:

a silicon carbide crystal diode adapted to generate light; and

a diamond coating grown on a surface of the silicon carbide crystal diode, wherein the diamond coating consists of a plurality of diamond crystals, each of the plurality of diamond crystals having a size of 1 nanometer or greater,

wherein the diamond coating provides a region having an index of refraction intermediate between an index of refraction of the silicon carbide crystal diode and an index of refraction of an intended target of light produced by the LED.

11. The LED of claim 10 wherein the diamond crystals are grown using a chemical vapor deposition process.