Antiblooming imaging apparatus, system, and methods
First Claim
Patent Images
1. An active pixel sensor comprising:
- a photosensitive region including a pinned photodiode structure, the pinned photodiode structure operatively coupled to an n-type conductivity region;
a first electron gate located adjacent to the n-type conductivity region and to the photosensitive region, the first electron gate operatively coupled to an adjustable voltage; and
a second electron gate located adjacent the n-type conductivity region and to a drain region, the second electron gate operatively coupled to the first electron gate, wherein a second electron barrier associated with the second electron gate is less than a first electron barrier associated with the first electron gate, and wherein a drain potential associated with the drain region is less than a first potential associated with the n-type conductivity region during an integration time.
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Abstract
Apparatus, systems and methods are described to assist in reducing dark current in an active pixel sensor. A potential barrier arrangement is configured to block the flow of charge carriers generated outside a photosensitive region. In various embodiments, a potential well-potential barrier arrangement is formed to direct charge carriers away from the photosensitive region during an integration time.
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Citations
11 Claims
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1. An active pixel sensor comprising:
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a photosensitive region including a pinned photodiode structure, the pinned photodiode structure operatively coupled to an n-type conductivity region; a first electron gate located adjacent to the n-type conductivity region and to the photosensitive region, the first electron gate operatively coupled to an adjustable voltage; and a second electron gate located adjacent the n-type conductivity region and to a drain region, the second electron gate operatively coupled to the first electron gate, wherein a second electron barrier associated with the second electron gate is less than a first electron barrier associated with the first electron gate, and wherein a drain potential associated with the drain region is less than a first potential associated with the n-type conductivity region during an integration time. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification