Fabrication of a high fill ratio silicon spatial light modulator

• US 7,675,670 B2
• Filed: 06/05/2006
• Issued: 03/09/2010
• Est. Priority Date: 10/28/2005
• Status: Active Grant

• Current Assignee: Miradia Inc. (Walsin Lihwa Corporation)
• Original Assignee: Miradia Inc. (Walsin Lihwa Corporation)
• Inventors: Wang, Ye, Woo, Howard, Payne, Justin Allen, Wang, Yuxiang, Yang, Xiao, Ji, Wook
• Primary Examiner(s): Mack; Ricky L
• Assistant Examiner(s): Thomas; Brandi N
• Application Number:
  US11/448,148
• Publication Number:
  US 20070097485A1
• Time in Patent Office: 1,373 Days
• Field of Search: 359/290, 359/292, 359/291, 359/295, 359/298
• US Class Current: 359/290
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means

Abstract

A method for forming an optical deflection device includes providing a semiconductor substrate comprising an upper surface region and a plurality of drive devices within one or more portions of the semiconductor substrate. The upper surface region includes one or more patterned structure regions and at least one open region to expose a portion of the upper surface region to form a resulting surface region. The method also includes forming a planarizing material overlying the resulting surface region to fill the at least one open region and cause formation of an upper planarized layer using the fill material. The method further includes forming a thickness of silicon material at a temperature of less than 300 ° C. to maintain a state of the planarizing material.

Claims

1. A method of forming a composite substrate structure, the method comprising:

providing a substrate comprising a plurality of electrode devices and a bias grid;

forming a planarized dielectric layer over the substrate, the planarized dielectric layer defining an upper surface opposing the substrate;

forming a cavity extending from the upper surface of the planarized dielectric layer to a predetermined depth, wherein a cavity volume is defined by a cavity area parallel to the upper surface of the planarized dielectric layer and the predetermined depth;

joining a single crystal silicon layer to the upper surface of the planarized dielectric layer to define a bonded area greater than the cavity area.

2. The method of claim 1 wherein the bonded area is two times greater than the cavity area.

3. The method of claim 2 wherein the bonded area is ten times greater than the cavity area.

4. The method of claim 3 wherein the bonded area is 90 times greater than the cavity area.

5. The method of claim 4 wherein the bonded area is characterized by a bonded area to a total area of greater than 10%.

6. The method of claim 1 wherein the plurality of electrode devices comprise a plurality of multi-level electrode devices.

7. The method of claim 6 wherein a portion of a first level of the plurality of multi-level electrode devices is covered by the planarized dielectric layer and a portion of a second level of the plurality of multi-level electrode devices is formed from the single crystal silicon layer.

8. The method of claim 1 wherein the planarized dielectric layer comprises an HDP silicon oxide layer.

9. The method of claim 8 wherein the HDP silicon oxide layer is formed at a temperature of less than 200 °

C.

10. The method of claim 9 wherein the HDP silicon oxide layer is formed at a temperature of less than 150 °

C.

11. The method of claim 1 wherein the planarized dielectric layer is fabricated from a material selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, poly-silicon, amorphous silicon, and low temperature poly-silicon.

12. The method of claim 1 wherein forming a planarized dielectric layer comprises a CMP process.

13. The method of claim 1 wherein joining a single crystal silicon layer to the upper surface of the planarized dielectric layer comprises performing a substrate bonding process.

14. The method of claim 13 wherein the substrate bonding process comprises a silicon-on-insulator substrate bonding process.

15. The method of claim 13 wherein the substrate bonding process is performed at a temperature less than an aluminum reflow temperature.

16. The method of claim 1 wherein joining a single crystal silicon layer to the upper surface of the planarized dielectric layer comprises:

substrate bonding an SOI substrate to planarized dielectric layer;

removing a first silicon layer; and

removing a buried oxide layer to expose the single crystal silicon layer.

17. The method of claim 1 wherein joining a single crystal silicon layer to the upper surface of the planarized dielectric layer is performed using an alignment process with a tolerance requirement of less than 1 cm.

18. The method of claim 17 wherein joining a single crystal silicon layer to the upper surface of the planarized dielectric layer comprises forming a covalent bond at room temperature.

19. The method of claim 18 wherein joining a single crystal silicon layer to the upper surface of the planarized dielectric layer comprises a plasma activation process and a room temperature covalent bonding process.

20. The method of claim 1 further comprising:

forming a plurality of vias passing through the single crystal silicon layer and the planarized dielectric layer to the bias grid; and

forming a plurality of via plugs, each of the plurality of via plugs passing through one of the plurality of vias.

21. The method of claim 20 wherein the plurality of via plugs provide electrical connectivity to the bias grid.

22. The method of claim 1 further comprising:

forming a second plurality of vias, each of the second plurality of vias passing through the single crystal silicon layer and the planarized dielectric layer to one of the plurality of electrode devices; and

forming a second plurality of via plugs, each of the second plurality of via plugs passing through one of the second plurality of vias.

23. The method of claim 22 wherein the second plurality of via plugs provide electrical connectivity to the plurality of electrode devices.