Intercalated superlattice compositions and related methods for modulating dielectric property

• US 7,678,463 B2
• Filed: 12/20/2006
• Issued: 03/16/2010
• Est. Priority Date: 12/20/2005
• Status: Active Grant

• Current Assignee: Northwestern University
• Original Assignee: Northwestern University
• Inventors: Marks, Tobin J., Facchetti, Antonio
• Primary Examiner(s): PENG, KUO LIANG
• Application Number:
  US11/642,504
• Publication Number:
  US 20070181961A1
• Time in Patent Office: 1,182 Days
• Field of Search: 428/447, 528/35
• US Class Current: 428/447
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H10K 10/23 Schottky diodes
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/471 the gate dielectric comprising only organic materials
• CPC Class Codes: H10K 10/474 the gate dielectric comprising a multilayered structure
• CPC Class Codes: H10K 10/476 comprising at least one organic layer and at least one inorganic layer
• CPC Class Codes: Y10T 428/31536 Including interfacial reaction product of adjacent layers
• CPC Class Codes: Y10T 428/31663 As siloxane, silicone or silane

Abstract

Compositions, methods of using inorganic moieties for dielectric modulation, and related device structures.

Claims

1. A thin film transistor device comprising:

a substrate;

a dielectric material deposited on the substrate; and

a semiconductor material deposited on the dielectric material;

wherein the dielectric material comprises a multilayer composition, the multilayer composition comprising periodically alternating layers, the alternating layers comprising (a) one or more layers comprising a silyl or siloxane moiety, (b) one or more layers comprising a π

-polarizable moiety, and (c) one or more layers comprising an inorganic moiety comprising one or more main group metals and/or transition metals.

2. The device of claim 1, wherein at least some of the alternating layers of the dielectric material are coupled to an adjacent layer by a coupling layer comprising a siloxane matrix.

3. The device of claim 1, wherein the silyl moiety has the formula selected from —

Si(CH2)_nSi—

, —

Si(CHF)_nSi—

, and —

Si(CF2)_nSi—

, wherein n is 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10.

4. The device of claim 1, wherein the π

-polarizable moiety comprises a stilbazolium group.

5. The device of claim 1, wherein the one or more main group metals and/or transition metals are independently selected from In, Ga, Zr, Ti, Hf, and Ta.

6. The device of claim 1, wherein the dielectric material comprises self-assembled monolayers of the silyl moiety.

7. The device of claim 1, wherein the dielectric material comprises self-assembled monolayers of the π

-polarizable moiety.

8. The device of claim 2, wherein at least some of the alternating layers of the dielectric material are coupled to one another or the siloxane matrix via a condensation reaction.

9. The device of claim 2, wherein at least some of the alternating layers of the dielectric material are coupled to one another or the siloxane matrix via chemisorption.

10. The device of claim 1, wherein both the substrate and the semiconductor material are transparent.