Process for manufacturing a membrane of semiconductor material integrated in, and electrically insulated from, a substrate
First Claim
1. A process for manufacturing an insulated membrane made of semiconductor material, comprising:
- forming, in a monolithic body of semiconductor material having a front face, a buried cavity extending at a distance from said front face and delimiting with said front face a surface region of said monolithic body, said surface region forming a membrane that is suspended above said buried cavity;
forming an insulation structure in a surface portion of said monolithic body such as to electrically insulate said membrane from said monolithic body; and
setting said insulation structure at a distance from said membrane so that said insulation structure is positioned outside, and at a non-zero distance of separation from said membrane.
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Accused Products
Abstract
A process for manufacturing an integrated membrane made of semiconductor material includes the step of forming, in a monolithic body of semiconductor material having a front face, a buried cavity, extending at a distance from the front face and delimiting with the front face a surface region of the monolithic body, the surface region forming a membrane that is suspended above the buried cavity. The process further envisages the step of forming an insulation structure in a surface portion of the monolithic body to electrically insulate the membrane from the monolithic body; and the further and distinct step of setting the insulation structure at a distance from the membrane so that it will be positioned outside the membrane at a non-zero distance of separation.
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Citations
30 Claims
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1. A process for manufacturing an insulated membrane made of semiconductor material, comprising:
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forming, in a monolithic body of semiconductor material having a front face, a buried cavity extending at a distance from said front face and delimiting with said front face a surface region of said monolithic body, said surface region forming a membrane that is suspended above said buried cavity; forming an insulation structure in a surface portion of said monolithic body such as to electrically insulate said membrane from said monolithic body; and setting said insulation structure at a distance from said membrane so that said insulation structure is positioned outside, and at a non-zero distance of separation from said membrane. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A microelectromechanical structure, comprising:
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a monolithic body of semiconductor material having a front face; and
a buried cavity, extending at a distance from said front face and delimiting with said front face a membrane, which is suspended above said buried cavity; andan insulation structure in a surface portion of said monolithic body, surrounding said membrane at a non-zero distance of separation and configured to electrically insulate said membrane from said monolithic body. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24)
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25. A process, comprising:
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forming at least two voids in a substrate and a membrane formed from the substrate material to completely cover at least one of the at least two voids; forming a trench completely around the membrane at a non-zero distance from the membrane and extending into the substrate to a depth that is at least a depth of at least one of the at least two voids in the substrate and in communication with at least one of the at least two voids; and forming a buried insulation region completely around the trench and all of the at least two voids via the trench to electrically insulate the membrane from a remainder of the substrate. - View Dependent Claims (26, 27, 28, 29, 30)
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Specification