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Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system

  • US 7,678,710 B2
  • Filed: 12/20/2006
  • Issued: 03/16/2010
  • Est. Priority Date: 03/09/2006
  • Status: Expired due to Fees
First Claim
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1. A method of forming a semiconductor device, comprising:

  • forming a dielectric layer having a desired thickness on a surface of a substrate;

    forming a concentration gradient of a first material within at least a portion of the thickness of the formed dielectric layer using a low energy sputtering process, wherein the low energy sputtering process comprises;

    pulsing an RE energy delivered at a first RF frequency and a first RF power to a processing region of a low energy sputtering chamber using an RF generator;

    pulsing a DC voltage delivered from a DC source assembly to a target disposed in the processing region; and

    synchronizing the pulsed RF energy and the pulsed DC voltage so that an amount of the first material removed from the target can be disposed within the dielectric layer;

    exposing the dielectric layer and the first material to an RF plasma comprising nitrogen; and

    depositing a second material over the dielectric layer.

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