Low wet etch rate silicon nitride film
First Claim
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1. A method of depositing a silicon nitride film on a substrate disposed in a processing chamber using a HDP-CVD process comprising:
- flowing a process gas mixture comprising nitrogen and silicon into the processing chamber while maintaining a mean ratio of the atomic-nitrogen flow to the atomic-silicon flow of about 50;
1 or greater, maintaining a mean pressure in the processing chamber of about 40 mTorr or less and maintaining a mean substrate temperature of 600°
C. or lower; and
forming a high density plasma from the process gas to deposit the silicon nitride film over the substrate wherein the high density plasma has an ion density on the order of 1011 ions/cm3 or greater and an ionization fraction on the order of 10−
4 or greater.
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Abstract
The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600° C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.
516 Citations
25 Claims
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1. A method of depositing a silicon nitride film on a substrate disposed in a processing chamber using a HDP-CVD process comprising:
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flowing a process gas mixture comprising nitrogen and silicon into the processing chamber while maintaining a mean ratio of the atomic-nitrogen flow to the atomic-silicon flow of about 50;
1 or greater, maintaining a mean pressure in the processing chamber of about 40 mTorr or less and maintaining a mean substrate temperature of 600°
C. or lower; andforming a high density plasma from the process gas to deposit the silicon nitride film over the substrate wherein the high density plasma has an ion density on the order of 1011 ions/cm3 or greater and an ionization fraction on the order of 10−
4 or greater. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of depositing a silicon nitride film on a substrate disposed in a processing chamber using a HDP-CVD process comprising:
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flowing diatomic nitrogen (N2) with a first gas flow rate and silane (SiH4) with a second gas flow rate into the processing chamber while maintaining a mean ratio of the first gas flow rate to the second gas flow rate of about 25;
1 or greater maintaining a mean pressure in the processing chamber is about 40 mTorr or less and maintaining a mean substrate temperature of 600°
C. or lower; andforming a high density plasma from the process gas to deposit the silicon nitride film over the substrate wherein the high density plasma has an ion density on the order of 1011 ions/cm3 or greater and an ionization fraction on the order of 10−
4 or greater. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification