Attenuator with bias control circuit

• US 7,679,417 B2
• Filed: 07/10/2008
• Issued: 03/16/2010
• Est. Priority Date: 07/10/2008
• Status: Expired due to Fees

• Current Assignee: Avago Technologies Wireless IP Singapore Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies Wireless IP Singapore Pte Limited (Broadcom, Inc.)
• Inventors: Vice, Michael Wendell
• Primary Examiner(s): LE, DINH THANH
• Application Number:
  US12/170,785
• Publication Number:
  US 20100007421A1
• Time in Patent Office: 614 Days
• Field of Search: 327/306, 327/308, 333/81.R
• US Class Current: 327/308
• CPC Class Codes: H03H 11/245 using field-effect transistor

Abstract

An attenuator includes one or more series attenuation branches including one or more series field effect transistors (FETs) each having a gate; one or more shunt attenuation branches including one or more shunt FETs each having a gate; and a bias control FET. The bias control FET receives at its gate a first bias control signal and in response thereto produces at one of its drain and source terminals a second bias control signal. Either the first bias control signal is coupled to the gates of one or more series FETs, and the second bias control signal is coupled to the gates of the one or more shunt FETs; or the first bias control signal is coupled to the gates of the one or more shunt FETs, and the second bias control signal is coupled to the gates of the one or more series FETs.

Claims

1. An attenuator, comprising:

an input port, an output port, an attenuation control port, and first and second supply voltages;

a first series attenuation branch, including a first field effect transistor, connected between the input port and an intermediate node;

a second series attenuation branch, including a second field effect transistor, connected between the node and the output port;

a shunt attenuation branch, including a third field effect transistor, connected between the intermediate node and the first supply voltage connection, a gate of third field effect transistor receiving the attenuation control signal from the attenuation control port; and

a bias control circuit, comprising

a fourth field effect transistor receiving at a gate thereof the attenuation control signal from the attenuation control port, and having a first terminal connected to the first supply voltage, and

a resistor connected between a second terminal of the fourth field effect transistor and the second supply voltage,

wherein a voltage at the second terminal of the fourth field effect transistor is coupled to gates of the first and second field effect transistors to supply a bias voltage thereto in response to the attenuation control signal.

2. The attenuator of claim 1, wherein the first series attenuation branch further includes a first resistor connected in parallel across a source and drain of the first field effect transistor, and the second series attenuation branch further includes a second resistor connected in parallel across a source and drain of the second field effect transistor.

3. The attenuator of claim 2, further comprising:

a first gate resistor coupling the bias voltage to the gate of the first field effect transistor;

a second gate resistor coupling the bias voltage to the gate of the second field effect transistor;

a third gate resistor coupling the attenuation control signal to the gate of the third field effect transistor; and

a fourth gate resistor coupling the attenuation control signal to the gate of the fourth field effect transistor.

4. The attenuator of claim 1, further comprising:

a first gate resistor coupling the bias voltage to the gate of the first field effect transistor;

a second gate resistor coupling the bias voltage to the gate of the second field effect transistor;

a third gate resistor coupling the attenuation control signal to the gate of the third field effect transistor; and

a fourth gate resistor coupling the attenuation control signal to the gate of the fourth field effect transistor.

5. The attenuator of claim 1, wherein all of the field effect transistors are fabricated in a vicinity to each other in an integrated circuit.

6. An attenuator comprising:

one or more series attenuation branches comprising one or more series field effect transistors, each having a gate;

one or more shunt attenuation branches comprising one or more shunt field effect transistors, each having a gate; and

one selected from the group consisting of;

(1) a bias control field effect transistor which receives at its gate a first bias control signal and in response thereto produces at one of its drain and source terminals a second bias control signal, wherein the first bias control signal is coupled to the gates of the one or more series field effect transistors, and the second bias control signal is coupled to the gates of the one or more shunt field effect transistors; and

(2) a bias control field effect transistor which receives at its gate a first bias control signal and in response thereto produces at one of its drain and source terminals a second bias control signal, wherein the first bias control signal is coupled to the gates of the one or more shunt field effect transistors, and the second bias control signal is coupled to the gates of the one or more series field effect transistors.

7. The attenuator of claim 6, wherein each series attenuation branch further includes a series resistor connected in parallel across a source and drain of the series field effect transistor.

8. The attenuator of claim 6, further comprising:

series gate resistors respectively coupling the first or second bias voltage to the gates of the series field effect transistor;

shunt gate resistors respectively coupling the second or first bias voltage to the gates of the shunt field effect transistors; and

a bias control gate resistor coupling the first bias control signal to the gate of the bias control field effect transistor.

9. The attenuator of claim 6, wherein the first bias control signal is coupled to the gates of the one or more series field effect transistors, and the second bias control signal is coupled to the gates of the one or more shunt field effect transistors.

10. The attenuator of claim 6, wherein the first bias control signal is coupled to the gates of the one or more shunt field effect transistors, and the second bias control signal is coupled to the gates of the one or more series field effect transistors.

11. The attenuator of claim 6, further comprising a resistor connecting one of its drain and source terminals of the bias control field effect transistor to a supply voltage.

12. The attenuator of claim 6, wherein all of the field effect transistors are fabricated in a vicinity to each other in an integrated circuit.

13. A method of attenuating a signal, the method comprising:

providing one or more series attenuation branches comprising one or more series field effect transistors, each having a gate;

providing one or more shunt attenuation branches comprising one or more shunt field effect transistors, each having a gate;

receiving a first bias control signal and providing the bias control signal to a bias control field effect transistor;

at the bias control field effect transistor, producing from the first bias control signal a second bias control signal having a voltage which changes in an opposite direction with respect to a change in voltage of the first bias control signal; and

one selected from the group consisting of;

(1) coupling the first bias control signal to the gates of each of the one or more series field effect transistors, and the second bias control signal is applied to the gates of the one or more shunt field effect transistors; and

(2) coupling the first bias control signal to the gates of the one or more shunt field effect transistors, and the second bias control signal is applied to the gates of the one or more series field effect transistors.

14. The method of claim 13, further comprising providing in each series attenuation branch a series resistor connected in parallel across a source and drain of the series field effect transistor.

15. The method of claim 13, further comprising:

coupling the first or second bias voltage to the gates of the series field effect transistor via corresponding series gate resistors;

coupling the second or first bias voltage to the gates of the shunt field effect transistors via corresponding shunt gate resistors; and

coupling the first bias control signal to the gate of the bias control field effect transistor via a bias control gate resistor.

16. The method of claim 13, wherein the first bias control signal is coupled to the gates of the one or more series field effect transistors, and the second bias control signal is coupled to the gates of the one or more shunt field effect transistors.

17. The method of claim 13, wherein the first bias control signal is coupled to the gates of the one or more shunt field effect transistors, and the second bias control signal is coupled to the gates of the one or more series field effect transistors.

18. The method of claim 13, further comprising providing a resistor connecting one of its drain and source terminals of the bias control field effect transistor to a supply voltage.

19. The method of claim 13, wherein further comprising providing all of the field effect transistors in a vicinity to each other in an integrated circuit.