Flash memory device and read method thereof

• US 7,679,966 B2
• Filed: 12/28/2005
• Issued: 03/16/2010
• Est. Priority Date: 06/03/2005
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kang, Joo-Ah, Kim, Jong Hwa
• Primary Examiner(s): Le; Vu A
• Assistant Examiner(s): Yang; Han
• Application Number:
  US11/320,413
• Publication Number:
  US 20060274588A1
• Time in Patent Office: 1,539 Days
• Field of Search: 365/203, 365/185.25, 365/149, 365/185.33
• US Class Current: 365/185.25
• CPC Class Codes: G11C 16/24 Bit-line control circuits
• CPC Class Codes: G11C 16/26 Sensing or reading circuits; Data output circuits

Abstract

A flash memory device and a read method thereof are provided. At a read operation, a sense node of a page buffer is developed while a bitline is developed and data of a selected memory cell is sensed based on the develop result of the sense node. For a develop period, voltage loss arising from the sense node is compensated fast and the compensated result is latched, which makes it possible to simplify the design and reduce a chip size.

Claims

1. A read method of a flash memory device, comprising:

precharging a bitline and a sense node;

developing the bitline and the sense node,

wherein developing the bitline and the sense node comprises providing time for a precharge level transition;

recharging the sense node to compensate voltage loss of the sense node; and

after recharging the sense node, sensing a data value of a selected memory cell in response to the develop result of the sense node,

wherein both the precharging operation and the recharging operation are always performed before the sensing operation is performed in each read cycle without regard to the data value of the selected memory cell.

2. The read method as recited in claim 1, wherein the sense node is developed while the bitline is developed.

3. The read method as recited in claim 1, wherein the sense node has a develop result corresponding to a develop result of the bitline.

4. A flash memory device comprising:

a memory cell array including a plurality of memory cells disposed at intersections of bitlines and wordlines; and

a page buffer circuit including a plurality of page buffers for sensing data stored in the memory cells,

wherein each of the page buffers precharges a corresponding bitline and a corresponding sense node and develops the sense node while the bitline is developed and senses a data value of a memory cell connected to a selected bitline in response to the develop result of the sense node, wherein developing the bitline and the sense node comprises providing time for a precharge level transition; and

wherein the page buffer recharges the sense node before sensing the data value, to compensate voltage loss of the sense node, and

wherein the page buffer performs both the precharging operation and the recharging operation before the sensing operation is always performed in each read cycle without regard to the data value of the memory cell connected to the selected bitline.

5. The flash memory device as recited in claim 4, wherein the sense node has a develop result corresponding to a develop result of the bitline.

6. A flash memory device comprising:

a memory cell array including a plurality of memory cells disposed at intersections of bitlines and wordlines; and

a page buffer circuit including a plurality of page buffers for sensing data stored in the memory cells,

wherein each of the page buffers comprises;

a precharge circuit for precharging a corresponding bitline and a corresponding a sense node and developing the sense node while the bitline is developed;

wherein developing the bitline and the sense node comprises providing time for a precharge level transition; and

a sense and latch circuit for sensing and storing a data value of a memory cell connected to a selected bitline in response to the develop result of the sense node,

wherein the page buffer recharges the sense node before sensing the data value, to compensate voltage loss of the sense node, and

wherein the page buffer performs both the precharging operation and the recharging operation before the sensing operation is always performed in each read cycle without regard to the data value of the memory cell connected to the selected bitline.

7. The flash memory device as recited in claim 6, wherein the precharge circuit comprises:

a first transistor for supplying a precharge circuit to the sense node and the bitline in response to a first control signal; and

a second transistor for controlling a precharge level of the bitline in response to a second control signal.

8. The flash memory device as recited in claim 7, wherein the precharge level of the bitline has a value obtained by subtracting a threshold voltage value of the second transistor from a voltage level of the second control signal.

9. The flash memory device as recited in claim 7, wherein after the bitline and the sense node are precharged, the first transistor cuts off the supply of the precharge voltage in response to the first control signal.

10. The flash memory device as recited in claim 8, wherein after the bitline and the sense node are precharged, the second control signal having a higher level than the precharge level is applied to the second transistor to match voltage levels of the bitline and the sense node.

11. The flash memory device as recited in claim 10, wherein the sense node has a develop result corresponding to a develop result of the bitline.

12. The flash memory device as recited in claim 7, wherein the first transistor supplies the precharge voltage to the sense node in response to the first control signal for a predetermined time before the data is sensed.