Capacitor layout technique for reduction of fixed pattern noise in a CMOS sensor

• US 7,681,163 B2
• Filed: 10/06/2006
• Issued: 03/16/2010
• Est. Priority Date: 08/13/2002
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Rossi, Giuseppe
• Primary Examiner(s): Chiang; Jack
• Assistant Examiner(s): Tat; Binh C
• Application Number:
  US11/543,823
• Publication Number:
  US 20070099389A1
• Time in Patent Office: 1,257 Days
• Field of Search: 716 8- 12, 716/1
• US Class Current: 716/119
• CPC Class Codes: H01L 27/0805 Capacitors only
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 29/94 Metal-insulator-semiconductors, e.g. MOS
• CPC Class Codes: Y10S 438/957 Making metal-insulator-metal device

Abstract

A new capacitor architecture includes a front plate of the capacitor formed from a first polysilicon layer. The front plate is surrounded by a first dielectric layer and a second dielectric layer. The back plate of the capacitor is formed from one layer of a first two-layer conductive structure which surrounds the first dielectric layer and the second dielectric layer. The two-layer conductive structure is an equal potential structure and includes a conductive coupling between the two layers.

Claims

1. An imager, comprising:

a pixel array including pixels for converting light into electrical signals; and

a circuit for sampling signals produced by a pixel, the sampling circuit including

an input line for receiving signals produced by said pixel,

a sample capacitor, and

a switch for controllably coupling said sample capacitor to said input line;

wherein said sample capacitor is fabricated as a semiconductor device and further includes

a front plate comprising a first conductive portion;

a first dielectric portion above and adjacent to said front plate;

a second dielectric portion below and adjacent to said front plate;

a first conductive structure surrounding said first and second dielectric portions, said conductive structure including a back plate of said capacitor;

a third dielectric portion above and adjacent to said first conductive structure;

a fourth dielectric portion below and adjacent to said first conductive structure; and

a second conductive structure surrounding said third and fourth portions.

2. The imager of claim 1, wherein said first conductive structure further comprises:

a first portion adjacent to a first one of said first and second dielectric portions;

a second portion adjacent to second one of said first and second dielectric portions; and

a conductive interconnect coupling said first and second portions;

wherein,

said first and second portions are conductive;

said first and second portions are equal potential; and

one of said first and second portions forms the back plate of the capacitor.

3. The imager of claim 2, wherein said first one of said first and second dielectric portions is an upper one of said first and second dielectric portions, and said first portion comprises metal.

4. The imager of claim 2, wherein said first one of said first and second dielectric portions is an upper one of said first and second dielectric portions, and said first portion comprises polysilicon.

5. The imager of claim 2, wherein said second portion comprises polysilicon located below and adjacent to said second dielectric portion.

6. The imager of claim 2, wherein said second portion comprises metal located below and adjacent to said second dielectric portion.

7. The imager of claim 3, wherein said first portion is the back plate of said capacitor.

8. The imager of claim 4, wherein said first portion is the back plate of said capacitor.

9. The imager of claim 1, wherein said second conductive structure further comprises:

a third portion adjacent to a first one of said third and fourth dielectric portions;

a fourth portion adjacent to a second one, different from said first one, of said third and fourth dielectric portions; and

a conductive interconnect coupling said third and fourth portions;

wherein,

said third and fourth portions are conductive; and

said third and fourth portions are equal potential.

10. The imager of claim 9, further comprising:

a second metal portion disposed above an upper one of said third and fourth dielectric portions.

11. The imager of claim 9, wherein said fourth portion is a substrate.

12. The imager of claim 11, wherein said substrate is grounded.

13. The imager of claim 1, wherein said first conductive portion is comprised of polysilicon.

14. The imager of claim 1, wherein said first conductive portion is comprised of a metal.

15. An imager, comprising:

a pixel array including pixels for converting light into electrical signals; and

a circuit for sampling signals produced by a pixel, the sampling circuit including

an input line for receiving signals produced by said pixel,

a sample capacitor, and

a switch for controllably coupling said sample capacitor to said input line;

wherein said sample capacitor is fabricated as a semiconductor device and further includes

a first plate;

a first conductive structure surrounding and thereby shielding said first plate to reduce parasitic capacitance, said first conductive structure further comprising a second plate of said capacitor; and

a second conductive structure surrounding and thereby shielding said first plate and said second plate to reduce parasitic capacitance.

16. The imager of claim 15, wherein said first plate is comprised of polysilicon.

17. The imager of claim 15, wherein said first plate is comprised of a metal.

18. The imager of claim 15, wherein said first conductive structure further comprises,

a second conductive layer;

and

a conductive interconnect conductively coupling said second plate and said second conductive layer.

19. The imager of claim 18, wherein said second conductive layer is comprised of polysilicon.

20. The imager of claim 18, wherein said second conductive layer is comprised of a metal.

21. The imager of claim 15, wherein said second conductive structure further comprises,

a third conductive layer;

a substrate; and

a conductive interconnect coupling said substrate and said third conductive layer.

22. The imager of claim 21, wherein said third conductive layer comprises polysilicon.

23. The imager of claim 21, wherein said third conductive layer comprises a metal.

24. An imager, comprising:

a pixel array including pixels for converting light into electrical signals;

a circuit for sampling signals produced by a pixel, the sampling circuit including

an input line for receiving signals produced by said pixel,

a sample capacitor, and

a switch for controllably coupling said sample capacitor to said input line;

wherein said sample capacitor is fabricated as a semiconductor device and further includes

a first plate,

a second plate,

a first shield, said first shield including a first surface and a second surface, said first surface and said second surface being equal potential surfaces, and

a second shield, said second shield including a third surface and a fourth surface,

said third surface and said fourth surface being equal potential surfaces;

wherein

said first plate and said second plate are disposed to form two plates of said capacitor,

said first surface and said second surface are disposed to shield said first plate to reduce parasitic capacitance,

and said third surface and said fourth surface are disposed to shield said first plate and said second plate to reduce parasitic capacitance.

25. The imager of claim 24, wherein said second shield is disposed to also shield said first shield.

26. The imager of claim 24, wherein said capacitor is formed over a substrate.

27. The imager of claim 26, wherein one of said first surface and said second surface is a polysilicon layer formed over said substrate.

28. The imager of claim 26, wherein one of said first surface and said second surface is a metal layer formed over said substrate.

29. The imager of claim 26, wherein one of said third surface and said fourth surface is said substrate formed over said substrate.

30. The imager of claim 26, wherein one of said third surface and said fourth surface is a metal layer formed over said substrate.

31. The imager of claim 26, wherein one of said first plate and said second plate is a metal layer formed over said substrate.

32. The imager of claim 26, wherein one of said first plate and said second plate is a polysilicon layer formed over said substrate.