Mask data generation method and mask
First Claim
Patent Images
1. A mask data generation method, comprising:
- arranging first and second auxiliary patterns adjacent to a device pattern, andperforming, by a computer, an optical proximity correction (OPC) process,wherein a first distance at which the first auxiliary pattern is spaced from a short side of the device pattern is set to be longer than a second distance at which the second auxiliary pattern is spaced from a long side of the device pattern upon arranging auxiliary patterns.
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Abstract
In a mask data generation method, when auxiliary patterns are arranged with respect to a device pattern, an arrangement rule for a tip of the device pattern is designed to be different from that for other portions. For portions that are corrected to a large extent by an OPC process, such as the tip of the device pattern, an auxiliary pattern is spaced at an increased distance from the device pattern. Specifically, a distance at which an auxiliary pattern is spaced from the tip of the device pattern is set to be longer than a distance at which an auxiliary pattern is spaced from a long side of the device pattern.
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Citations
20 Claims
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1. A mask data generation method, comprising:
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arranging first and second auxiliary patterns adjacent to a device pattern, and performing, by a computer, an optical proximity correction (OPC) process, wherein a first distance at which the first auxiliary pattern is spaced from a short side of the device pattern is set to be longer than a second distance at which the second auxiliary pattern is spaced from a long side of the device pattern upon arranging auxiliary patterns. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A mask data generation method, comprising:
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arranging first and second auxiliary patterns adjacent to a device pattern, and performing, by a computer, an optical proximity correction (OPC) process, wherein a first distance at which the first auxiliary pattern is spaced from a first side of the device pattern is set to be longer than a second distance at which the second auxiliary pattern is spaced from a second side of the device pattern upon arranging auxiliary patterns. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A mask, comprising:
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first and second auxiliary patterns being arranged adjacent to a device pattern, wherein a first distance at which the first auxiliary pattern is spaced from a first side of the device pattern is set to be longer than a second distance at which the second auxiliary pattern is spaced from a second side of the device pattern upon arranging auxiliary patterns. - View Dependent Claims (18, 19, 20)
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Specification