RFID silicon antenna
First Claim
1. A method of producing a Radio Frequency Identification (RFID) antenna as an integral part of an RFID integrated circuit using silicon as antenna material thereby enabling the antenna and an RFID integrated circuit to be manufactured as one piece, said method comprising:
- providing commercially produced bulk sheets of silicon wafer base material (silicon wafers);
femtosecond laser ablating, with a sharply focused pulse, the silicon wafers to create three dimensional nano structures out of the silicon base material;
designing an antenna as a complex resonant antenna at a macro level and reducing it, through a process of de-magnification or photographically, to a nano sized image which perfectly replicates design features of a macro level template directional antenna on a master stencil mask and, still further, forming this master stencil mask on the reverse side of silicon wafers treated with femtosecond laser ablation;
manufacturing said femtosecond laser ablated silicon wafers so that they are manufactured into radio frequency identification antennas.
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Abstract
The system of producing an RFID antenna using the silicon in an integrated circuit as the resonant antenna material for the purpose of reducing the cost of an RFID system and for the purpose of increasing the range and selectivity of the RFID system. According to this invention the base silicon sheets which make up the primary building material of the silicon chip (integrated circuit) is subjected to a laser ablation process. This creates three dimensional nano structures on the surface of the silicon thereby raising its absorption rate of electro magnetic signals. On the reverse side of the same silicon sheet a directional antenna is etched using standard photographic reduction techniques and standard semi conductor industry manufacturing methods. The two sides of the silicon are connected through doping aluminum or copper impurities into these same base silicon sheets causing conductivity within the sheet of silicon.
42 Citations
16 Claims
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1. A method of producing a Radio Frequency Identification (RFID) antenna as an integral part of an RFID integrated circuit using silicon as antenna material thereby enabling the antenna and an RFID integrated circuit to be manufactured as one piece, said method comprising:
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providing commercially produced bulk sheets of silicon wafer base material (silicon wafers); femtosecond laser ablating, with a sharply focused pulse, the silicon wafers to create three dimensional nano structures out of the silicon base material; designing an antenna as a complex resonant antenna at a macro level and reducing it, through a process of de-magnification or photographically, to a nano sized image which perfectly replicates design features of a macro level template directional antenna on a master stencil mask and, still further, forming this master stencil mask on the reverse side of silicon wafers treated with femtosecond laser ablation; manufacturing said femtosecond laser ablated silicon wafers so that they are manufactured into radio frequency identification antennas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. The method of producing a Radio Frequency Identification (RFID) antenna as an integral part of an RFID integrated circuit using silicon as antenna material thereby enabling the antenna and integrated circuit to be manufactured as one piece, said method comprising:
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providing commercially produced bulk sheets of silicon wafer base material (silicon wafers); femtosecond laser ablating, with a sharply focused pulse, the silicon wafers to create three dimensional nano structures out of the silicon base material; designing the antenna as a complex resonant antenna at a macro level and reducing it through a process of de-magnification or photographically to a nano sized image which perfectly replicates design features of a macro level template directional antenna on a master stencil mask and, still further, forming this structure on the reverse side of silicon wafers treated with femtosecond laser ablation; manufacturing said femtosecond laser ablation silicon wafers into radio frequency identification antennas and whereby the individual wafers are applied, using standard semiconductor industry layering method, onto a semiconductor to be used in an RFID system.
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Specification