Method of processing substrate, and method of and program for manufacturing electronic device

• US 7,682,517 B2
• Filed: 02/14/2006
• Issued: 03/23/2010
• Est. Priority Date: 02/14/2005
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Iwasaki, Kenya, Nishimura, Eiichi
• Primary Examiner(s): Ahmed; Shamim
• Assistant Examiner(s): ANGADI, MAKI A
• Application Number:
  US11/353,132
• Publication Number:
  US 20060194435A1
• Time in Patent Office: 1,498 Days
• Field of Search: 216/58, 438/637
• US Class Current: 216/58
• CPC Class Codes: H01L 21/0206 during, before or after processing of insulating layers
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/67161 characterized by the layout of the process chambers
• CPC Class Codes: H01L 21/67167 surrounding a central transfer chamber
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers
• CPC Class Codes: H01L 21/67201 characterized by the construction of the load-lock chamber
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: Y10S 438/906 Cleaning of wafer as interim step

Abstract

A method of processing a substrate that enables the amount removed of a surface damaged layer to be controlled easily, and enable a decrease in wiring reliability to be prevented. A surface damaged layer having a reduced carbon concentration of a carbon-containing low dielectric constant insulating film on a substrate is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The surface damaged layer that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.

Claims

1. A method of processing a substrate having a carbon-containing low dielectric constant insulating film thereon, the low dielectric constant insulating film having a surface damaged layer having a reduced carbon concentration lower than a carbon concentration of the low dielectric constant insulating film, the method removing the surface damage layer of the low dielectric constant insulating film and comprising:

a surface damaged layer exposure step of exposing the surface damaged layer to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and

a surface damaged layer heating step of heating to a predetermined temperature the surface damaged layer that has been exposed to the atmosphere of the mixed gas.

2. A method as claimed in claim 1, wherein in said surface damaged layer exposure step, the substrate is subjected to plasma-less etching.

3. A method as claimed in claim 1, wherein in said surface damaged layer exposure step, the substrate is subjected to dry cleaning.

4. A method as claimed in claim 1, wherein a volumetric flow rate ratio of the hydrogen fluoride to the ammonia in the mixed gas is in a range of 1 to ½

, and the predetermined pressure is in a range of 6.7×

10² to 4.0 Pa.

5. A method as claimed in claim 1, wherein the predetermined temperature is in a range of 80 to 200°

C.

6. A method as claimed in claim 1, further comprising a product production condition deciding step of measuring a shape of the low dielectric constant insulating film having the surface damaged layer, and deciding at least one of the volumetric flow rate ratio of the hydrogen fluoride to the ammonia in the mixed gas and the predetermined pressure in accordance with the measured shape.

7. A method of processing a substrate having thereon a mask film comprising at least one of a photoresist film and a hard mask film, the mask film having a surface damaged layer, the method removing the surface damaged layer of the mask film and comprising:

a surface damaged layer exposure step of exposing the surface damaged layer to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and

a surface damaged layer heating step of heating to a predetermined temperature the surface damaged layer that has been exposed to the atmosphere of the mixed gas.

8. A method of manufacturing an electronic device, comprising:

a low dielectric constant insulating film formation step of forming a carbon-containing low dielectric constant insulating film on a capacitor comprising a lower electrode, a capacitive insulating film and an upper electrode that has been formed on a semiconductor substrate;

a photoresist layer formation step of forming a photoresist layer in a predetermined pattern on the formed low dielectric constant insulating film;

a plasma fabrication step of fabricating a connecting hole reaching the upper electrode in the low dielectric constant insulating film by plasma processing using the formed photoresist layer;

a connecting hole surface exposure step of exposing a surface of the fabricated connecting hole to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and

a connecting hole surface heating step of heating to a predetermined temperature the surface of the connecting hole that has been exposed to the atmosphere of the mixed gas.

9. A method of manufacturing an electronic device, comprising:

an interlayer insulating film formation step of forming a carbon-containing low dielectric constant insulating film on a semiconductor substrate, and forming an other insulating film having a lower carbon concentration than the low dielectric constant insulating film on the low dielectric constant insulating film, so as to form an interlayer insulating film;

a plasma fabrication step of fabricating a wiring groove in the interlayer insulating film by plasma processing;

a wiring groove surface exposure step of exposing at least a surface of the wiring groove at the low dielectric constant insulating film to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure;

a wiring groove surface heating step of heating to a predetermined temperature the surface of the wiring groove that has been exposed to the atmosphere of the mixed gas;

an other insulating film removal step of removing the other insulating film; and

a wiring formation step of forming wiring by introducing a conductive material into the wiring groove.

10. A method as claimed in claim 9, further comprising:

a photoresist layer formation step of forming a photoresist layer on the other insulating film; and

an ashing step of removing the formed photoresist layer;

wherein in said ashing step, the photoresist layer is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure, and then the photoresist layer that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.

11. A method of manufacturing an electronic device, comprising:

a conductive film formation step of forming a silicon-containing conductive film on a semiconductor substrate;

a low dielectric constant insulating film formation step of forming a carbon-containing low dielectric constant insulating film on the formed conductive film;

a photoresist layer formation step of forming a photoresist layer in a predetermined pattern on the formed low dielectric constant insulating film;

a plasma fabrication step of fabricating a connecting hole reaching the conductive film in the low dielectric constant insulating film by plasma processing using the formed photoresist layer;

a connecting hole surface exposure step of exposing a surface of the fabricated connecting hole to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure;

a connecting hole surface heating step of heating to a predetermined temperature the surface of the connecting hole that has been exposed to the atmosphere of the mixed gas;

an ashing step of removing the photoresist layer; and

a wiring formation step of forming wiring by introducing a conductive material into the connecting hole.

12. A method of manufacturing an electronic device, comprising:

a conductive film formation step of forming a silicon-containing conductive film on a semiconductor substrate;

a low dielectric constant insulating film formation step of forming a silicon-containing low dielectric constant insulating film on the formed conductive film;

an anti-reflection film formation step of forming an anti-reflection film on the formed low dielectric constant insulating film;

a photoresist layer formation step of forming a photoresist layer having a pattern corresponding to a desired gate shape on the formed anti-reflection film;

an anti-reflection film removal step of removing partially the anti-reflection film through etching by using the formed photoresist layer to expose the low dielectric constant insulating film;

a low dielectric constant insulating film removal step of removing the exposed low dielectric constant insulating film by plasma processing using the formed photoresist layer to expose the conductive film;

a low dielectric constant insulating film side surfaces exposure step of exposing side surfaces of a part of the low dielectric constant insulating film below the photoresist layer, which has not been removed in said low dielectric constant insulating film removal step, to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure;

a low dielectric constant insulating film side surfaces heating step of heating to a predetermined temperature the side surfaces of the part of the low dielectric constant insulating film which has been exposed to the atmosphere of the mixed gas; and

a conductive film removal step of removing through etching the conductive film not being covered with the part of the low dielectric constant insulating film which has not been removed.