Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission
First Claim
1. A composition, comprising,a fullerene;
- a functionalizing group disposed on at least a portion of a surface of the fullerene, wherein the functionalizing group comprises one or more hydroxide groups chemically bound to said surface portion of the fullerene; and
a film of a semiconducting material disposed on at least the portion of the surface of the fullerene that includes the functionalizing group, wherein the semiconducting material disposed on at least said surface portion of the fullerene has a thickness in a range of about 100 nm to about 5000 nm and wherein the semiconductor material comprises at least one of ZnS, CdS, CdSe, GaAs, InP, GaS, TiO2, and Fe2S3.
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Accused Products
Abstract
A nanoparticle coated with a semiconducting material and a method for making the same. In one embodiment, the method comprises making a semiconductor coated nanoparticle comprising a layer of at least one semiconducting material covering at least a portion of at least one surface of a nanoparticle, comprising: (A) dispersing the nanoparticle under suitable conditions to provide a dispersed nanoparticle; and (B) depositing at least one semiconducting material under suitable conditions onto at least one surface of the dispersed nanoparticle to produce the semiconductor coated nanoparticle. In other embodiments, the nanoparticle comprises a fullerene. Further embodiments include the semiconducting material comprising CdS or CdSe.
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Citations
19 Claims
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1. A composition, comprising,
a fullerene; -
a functionalizing group disposed on at least a portion of a surface of the fullerene, wherein the functionalizing group comprises one or more hydroxide groups chemically bound to said surface portion of the fullerene; and a film of a semiconducting material disposed on at least the portion of the surface of the fullerene that includes the functionalizing group, wherein the semiconducting material disposed on at least said surface portion of the fullerene has a thickness in a range of about 100 nm to about 5000 nm and wherein the semiconductor material comprises at least one of ZnS, CdS, CdSe, GaAs, InP, GaS, TiO2, and Fe2S3. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 18)
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9. A composition, comprising:
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a fullerene; a functionalizing group disposed on at least a portion of a surface of the fullerene, wherein the functionalizing group comprises one or more hydroxide groups chemically bound to said surface portion of the fullerene; and a semiconducting material coating at least the portion of the surface of the fullerene that includes the functionalizing group, wherein the semiconductor material comprises at least one of ZnS, CdS, CdSe, GaAs, InP, GaS, TiO2, and Fe2S3 and wherein the semiconducting material coating on at least said surface portion of the fullerene has a thickness in a range of about 100 nm to about 5000 nm. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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19. A composition, comprising,
a fullerene; -
a functionalizing group disposed on at least a portion of a surface of the fullerene, wherein the functionalizing group comprises one or more hydroxide groups chemically bound to said surface portion of the fullerene; and a semiconducting material disposed on the portion of the surface of the fullerene that includes the functionalizing group, wherein the semiconductor material comprises at least one of ZnS, CdS, CdSe, GaAs, InP, GaS, TiO2, and Fe2S3 and wherein the semiconducting material coats all of the surface of the fullerene and has a thickness in a range of about 100 nm to about 5000 nm.
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Specification