Patterned strained semiconductor substrate and device

• US 7,682,859 B2
• Filed: 10/31/2007
• Issued: 03/23/2010
• Est. Priority Date: 07/23/2004
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: International Business Machines Corporation
• Inventors: Divakaruni, Ramachandra, Cheng, Kangguo
• Primary Examiner(s): Monbleau; Davienne
• Assistant Examiner(s): REAMES, MATTHEW L
• Application Number:
  US11/931,836
• Publication Number:
  US 20080061317A1
• Time in Patent Office: 874 Days
• Field of Search: 438/47, 438/153, 438/199, 438/296, 257/E31.035
• US Class Current: 438/47
• CPC Class Codes: H01L 21/823412 with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
• CPC Class Codes: H01L 29/1054 with a variation of the composition, e.g. channel with strained layer for increasing the mobility
• CPC Class Codes: H01L 29/739 controlled by field-effect, e.g. bipolar static induction transistors [BSIT] unijunction transistors H01L29/705
• CPC Class Codes: H01L 29/78687 with a multilayer structure or superlattice structure

Abstract

A method that includes forming a pattern of strained material and relaxed material on a substrate; forming a strained device in the strained material; and forming a non-strained device in the relaxed material is disclosed. In one embodiment, the strained material is silicon (Si) in either a tensile or compressive state, and the relaxed material is Si in a normal state. A buffer layer of silicon germanium (SiGe), silicon carbon (SiC), or similar material is formed on the substrate and has a lattice constant/structure mis-match with the substrate. A relaxed layer of SiGe, SiC, or similar material is formed on the buffer layer and places the strained material in the tensile or compressive state. In another embodiment, carbon-doped silicon or germanium-doped silicon is used to form the strained material. The structure includes a multi-layered substrate having strained and non-strained materials patterned thereon.

Claims

1. A method for forming an electrical device, the method comprising:

forming a buffer layer in contact with a portion of a substrate, the buffer layer having a lattice constant/structure mismatch with the substrate;

forming a relaxed layer on the buffer layer;

forming a strained material on a top surface of the relaxed layer, such that the relaxed layer places the strained material in one of a tensile or a compressive state;

forming a strained device in the strained material; and

forming a non-strained device directly on the substrate adjacent the strained material.

2. The method of claim 1, wherein the relaxed layer comprises a material which has a lattice constant/structure mismatch with the strained material.

3. The method of claim 1, wherein the buffer layer is selected from the group consisting of silicon carbon (SiC), silicon germanium (SiGe), Al_X1Ga_X2In_X3As_Y1P_Y2N_Y3Sb_Y4, where X1, X2, X3, Y1, Y2, Y3, and Y4 represent relative proportions, each greater than or equal to zero and X1+X2+X3+Y1+Y2+Y3+Y4=1, and Zn_A1Cd_A2Se_B1Te_B2, where A1, A2, B1, and B2 are relative proportions each greater than or equal to zero and A1+A2+B1+B2=1.

4. The method of claim 1, wherein the step of forming the buffer layer further comprises epitaxially growing multiple layers of a material forming the buffer layer such that the material forming the buffer layer has a base concentration proximate the substrate and an increased bench-mark concentration proximate the relaxed layer.

5. The method of claim 1, wherein the relaxed layer is selected from the group consisting of silicon carbon (SiC), silicon germanium (SiGe), Al_X1Ga_X2In_X3As_Y1P_Y2N_Y3Sb_Y4, where X1, X2, X3, Y1, Y2, Y3, and Y4 represent relative proportions, each greater than or equal to zero and X1+X2+X3+Y1+Y2+Y3+Y4=1, and Zn_A1Cd_A2Se_B1Te_B2, where A1, A2, B1, and B2 are relative proportions each greater than or equal to zero and A1+A2+B1+B2=1.

6. The method of claim 1, wherein the strained material is a semiconductor material doped by carbon or germanium.

7. The electrical device of claim 1, further comprising forming a recess in the substrate and enclosing the buffer layer, the recess having sidewalls.

8. The electrical device of claim 7, further comprising forming an insulating layer on the sidewalls.

9. The electrical device of claim 8, wherein a material that forms the insulating layer is one of an oxide and a nitride.

10. The electrical device of claim 8, wherein a portion of the substrate on which the non-strained device is formed is located outside a confine of the insulating material.

11. The method of claim 1, further comprising etching a recess through a pad oxide layer into the substrate.

12. The method of claim 11, further comprising:

conformally coating an insulating layer on sidewalls and a bottom of the recess; and

removing a portion of the insulating layer from the bottom of the recess,

wherein the buffer layer, the relaxed later, and the strained layer are formed within the recess.

13. The method of claim 12, further comprising:

removing the pad oxide layer; and

planarizing the substrate,

wherein the strained device and the non-strained device are formed after the removing the pad oxide layer and the planarizing.

14. A method for forming an electrical device, the method comprising:

etching a recess through a pad oxide layer and into a substrate;

forming an insulating layer on sidewalls and a bottom of the recess;

removing a portion of the insulating layer from the bottom of the recess;

forming a buffer layer in the recess and between portions of the insulating layer, wherein the buffer layer is in contact with a portion of the substrate and has a lattice constant/structure mismatch with the substrate;

forming a relaxed layer in the recess and between the portions of the insulating layer, wherein the relaxed layer is in contact with the buffer layer;

forming a strained layer in the recess and between the portions of the insulating layer, wherein the strained layer is in contact with the relaxed layer;

stripping the pad oxide layer;

planarizing the substrate;

forming a strained device in the strained material; and

forming a non-strained device in the substrate adjacent to the strained material.

15. The method of claim 14, wherein a concentration of a material in the buffer layer increases from a base concentration at a bottom of the buffer layer to a benchmark concentration at a top of the buffer layer.

16. The method of claim 15, wherein the relaxed layer has a second base concentration at a bottom of the relaxed layer that approximately equals the benchmark concentration at the top of the buffer layer.

17. The method of claim 16, wherein the relaxed layer comprises a material which has a lattice constant/structure mismatch with the strained material.

18. The method of claim 14, wherein;

the forming the buffer layer comprises depositing or growing multiple layers; and

each respective one of the layers has a different concentration of a material such that a concentration of the material in the buffer layer incrementally increases from a base concentration proximate the substrate to a benchmark concentration proximate a top surface of the buffer layer.