Superlattice photodiodes with polyimide surface passivation

• US 7,682,865 B2
• Filed: 06/10/2008
• Issued: 03/23/2010
• Est. Priority Date: 06/10/2008
• Status: Active Grant

• Current Assignee: Northwestern University
• Original Assignee: MP Technologies, LLC (APi Group Corp.)
• Inventors: Razeghi, Manijeh
• Primary Examiner(s): Geyer; Scott B
• Application Number:
  US12/136,446
• Publication Number:
  US 20090302309A1
• Time in Patent Office: 651 Days
• Field of Search: None
• US Class Current: 438/93
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 31/1868 Passivation
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

The subject invention comprises the realization of a superlattice photodiode with polyimide surface passivation. Effective surface passivation of type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment, nor time, can be realized by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer.

Claims

1. A method of passivating type-II InAs/GaSb superlattice photodiodes, comprising depositing a passivation layer consisting of polyimide on the whole of said type-II InAs/GaSb superlattice photodiode.

2. The method of claim 1, including the steps of:

doping a 2 μ

m thick active region of a p-type GaSb base layer;

isolating a plurality of diode mesas;

etching the diode mesas;

depositing a top and a bottom contact on the superlattice photodiode;

depositing a passivation layer of polyimide while gradually ramping the temperature to 180°

C.; and

curing the superlattice photodiode for 45 minutes.

3. The method in claim 2 wherein the 2 μ

m thick active region is doped lightly p-type with beryllium (p˜

10¹⁵ cm<sup>−

3</sup>).

4. The method of claim 2 wherein the top and the bottom contacts comprise Ti.

5. The method of claim 2 wherein the top and the bottom contacts comprise Pt.

6. The method of claim 2 wherein the top and the bottom contacts comprise Au.

7. The method of claim 2 wherein depositing the polyimide passivation layer consists of spinning the polyimide directly onto the wire bonded sample.

8. The method of claim 2 wherein depositing the polyimide passivation layer comprises etching vias in the polyimide passivation layer using an oxygen plasma.

9. The method of claim 2 wherein the superlattice photodiode contains devices with perimeter-to-area ratios ranging from 100 to 400 cm⁻

1.

10. The method of claim 2 wherein the superlattice photodiode contains devices with perimeter-to-area ratios ranging from 100 to 1600 cm⁻

1.

11. The method of claim 2 wherein the superlattice photodiode contains a plurality of groupings of diode arrays ranging in size from 400 to 25 μ

m on a side, with 2 and 3 μ

m spaces between mesas.

12. The method of claim 2 wherein the passivation layer of polyimide has a thickness of about 2 μ

m.

13. The method of claim 2 wherein the polyimide passivation layer comprises a copolymer polyimide of Benzophenone Tetracarboxylic Dianhydride and 4, 4-Oxydianiline and m-Phenylenediamine.

14. An infrared imaging device, comprising:

a substrate;

a type-II superlattice photodiode grown on the substrate;

a plurality of diode mesas created by using UV photolithography and electron-cyclotron resonant-reactive ion etching in a BCl₃-based etch chemistry

a plurality of top and bottom contacts deposited on the superlattice structure; and

a 2 μ

m-thick polyimide passivation layer of polyimide spun on the entire surface of the infrared imaging device.

15. The infrared imaging device of claim 14, wherein the substrate is p-type GaSb.

16. The infrared imaging device of claim 14, wherein the superlattice contains a 2 μ

m-thick active region, where the active region is doped lightly p-type with beryllium (p˜

10¹⁵ cm<sup>−

3</sup>).

17. The device of claim 14 wherein the top and the bottom contacts comprise Ti.

18. The device of claim 14 wherein the top and the bottom contacts comprise Pt.

19. The device of claim 14 wherein the top and the bottom contacts comprise Au.

20. The device of claim 14 wherein the polyimide is an aromatic heterocyclic polyimide.