Wafer alignment and bonding

• US 7,682,933 B1
• Filed: 09/26/2007
• Issued: 03/23/2010
• Est. Priority Date: 09/26/2007
• Status: Expired due to Fees

• Current Assignee: The United States of America As Represented By The Secretary of Agriculture
• Original Assignee: United States Of America As Represented By The Secretary Of The Air Force
• Inventors: Loomis, Andrew H.
• Primary Examiner(s): Ghyka; Alexander G
• Assistant Examiner(s): Nikmanesh; Seahvosh J
• Application Number:
  US11/973,981
• Time in Patent Office: 909 Days
• Field of Search: 438/455, 438/457, 257/E21.122
• US Class Current: 438/457
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Provided is a method and apparatus for close alignment of two or more electrically conductive wafers which are positioned face-to-face in closely spaced opposition, the wafers having position marks on corresponding portions thereof, the wafers being aligned as to their mating components, as guided by optically comparing the alignment of the respective position marks; deflecting an interior portion of one of the wafers into contact with the other wafer, to partially bond the wafers to each other, then fully contacting and bonding the rest of the wafer pair and then optically checking the resulting wafer alignment to see if same is acceptable.

Claims

1. A method for alignment of at least two wafers comprising,

a) placing said wafers in closely spaced face-to-face opposition, which faces have been hydrophilically treated,

b) deflecting one wafer into contact with the other at least at an interior portion thereof, while holding the remainders of said wafers apart, by exterior pulling means, to partially bond the wafer pair and

c) releasing said remainders so as to permit a contact bonding wave to spread from said interior portion to the wafer edges to adhere said wafers to each other in a full bond.

2. The method of claim 1 comprising, providing position marks on corresponding portions of the two wafers and optically checking the alignment of said marks before and after full bonding of said wafer pair.

3. The method of claim 2 comprising, applying heat and/or pressure in situ to more permanently bond the wafer pair.

4. The method of claim 2 wherein said wafers are placed on a pair of opposed vacuum pulling chucks, said chucks each having a viewing aperture therein in optical alignment with each other and in view said position marks so that a viewer can adjust the position of one or both wafers as desired, to achieve alignment of said marks and thus alignment of the wafers before partially bonding said wafer pair.

5. The method of claim 4 wherein said position marks in said aligned viewing apertures are illuminated by IR light for read-out by a detector which feeds a visual display.

6. The method of claim 5 serving to align two or more wafers to within <

1μ

.

7. The method of claim 4 wherein said position marks are in the form of cross-hairs on each wafer, which cross-hairs are visually distinct even when overlapped.

8. The method of claim 7 wherein said wafers can be separated by a minimum distance of <

5-10μ

with said chucks specified flat to within ±

1μ

.

9. The method of claim 2 serving to align two or more wafers to within 1μ

.

10. The method of claim 1 comprising,

a) transferring the contact bonded wafer pair to a bonding apparatus and

b) applying heat and/or pressure to more permanently bond the wafer pair.

11. The method of claim 10 serving to align two or more wafers to within <

1μ

.

12. The method of claim 1 wherein said exterior pulling means is at least two vacuum sources exterior to said wafer pair.

13. The method of claim 1 wherein said wafers are placed on a pair of opposed vacuum pulling chucks and said one wafer is deflected by a plunger that passes through an aperture in one of said chucks.

14. The method of claim 1 wherein, if desired, said wafers can be peeled apart and cleaned for realignment and rebonding.