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Integrated circuit with bulk and SOI devices connected with an epitaxial region

  • US 7,682,941 B2
  • Filed: 05/16/2007
  • Issued: 03/23/2010
  • Est. Priority Date: 10/08/2004
  • Status: Expired due to Fees
First Claim
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1. A method for forming a semiconductor integrated circuit with an SOI region and a bulk region, comprising the steps of:

  • a) forming a substrate with an SOI region and a bulk region separated by an embedded sidewall spacer;

    b) etching the sidewall spacer to form a trench;

    c) epitaxially growing semiconductor material in the trench from said SOI region and said bulk region to fill the trench;

    d) forming a silicide region bridging across a portion of each of said SOI region and said bulk region and extending across said semiconductor material epitaxially grown in said trench.

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