Integrated circuit with bulk and SOI devices connected with an epitaxial region
First Claim
1. A method for forming a semiconductor integrated circuit with an SOI region and a bulk region, comprising the steps of:
- a) forming a substrate with an SOI region and a bulk region separated by an embedded sidewall spacer;
b) etching the sidewall spacer to form a trench;
c) epitaxially growing semiconductor material in the trench from said SOI region and said bulk region to fill the trench;
d) forming a silicide region bridging across a portion of each of said SOI region and said bulk region and extending across said semiconductor material epitaxially grown in said trench.
2 Assignments
0 Petitions
Accused Products
Abstract
An integrated circuit having devices fabricated in both SOI regions and bulk regions, wherein the regions are connected by a trench filled with epitaxially deposited material. The filled trench provides a continuous semiconductor surface joining the SOI and bulk regions. The SOI and bulk regions may have the same or different crystal orientations. The present integrated circuit is made by forming a substrate with SOI and bulk regions separated by an embedded sidewall spacer (made of dielectric). The sidewall spacer is etched, forming a trench that is subsequently filled with epitaxial material. After planarizing, the substrate has SOI and bulk regions with a continuous semiconductor surface. A butted P-N junction and silicide layer can provide electrical connection between the SOI and bulk regions.
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Citations
10 Claims
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1. A method for forming a semiconductor integrated circuit with an SOI region and a bulk region, comprising the steps of:
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a) forming a substrate with an SOI region and a bulk region separated by an embedded sidewall spacer; b) etching the sidewall spacer to form a trench; c) epitaxially growing semiconductor material in the trench from said SOI region and said bulk region to fill the trench; d) forming a silicide region bridging across a portion of each of said SOI region and said bulk region and extending across said semiconductor material epitaxially grown in said trench. - View Dependent Claims (2, 3, 4, 5)
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6. A method for forming a semiconductor integrated circuit with an SOI region and a bulk region having differing crystal orientations, comprising the steps of:
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a) forming a substrate with and SOI region and a bulk region separated by an embedded sidewall spacer wherein crystal orientation in said SOI region differs from crystal orientation in said bulk region; b) etching the sidewall spacer to form a trench; and c) epitaxially growing semiconductor material in the trench from said SOI region and said bulk region to fill the trench such that a transition in crystal orientation occurs in said semiconductor material grown within said trench. - View Dependent Claims (7, 8, 9, 10)
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Specification