Method for manufacturing semiconductor device
First Claim
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1. A method for manufacturing a semiconductor device, the method comprising:
- forming an insulation layer on a bottom structure of a semiconductor substrate;
forming a trench and a via hole by selectively etching the insulation layer;
forming a copper layer on an entire surface of the semiconductor substrate until filling the via hole and the trench;
planarizing the copper layer by chemical mechanical polishing to form a copper line filling the via hole and the trench;
performing a plasma process to form a plasma-treated surface layer on the semiconductor substrate; and
removing the plasma-treated surface layer, wherein removing the surface layer of the Semiconductor substrate comprises;
performing a radio frequency pre-clean process using an Ar plasma, and a Ge ion implantation process.
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Abstract
Provided is a method for manufacturing a semiconductor device. An insulation layer is formed on a bottom structure of a semiconductor substrate. Then, a trench and a via hole are formed by selectively etching the insulation layer, and a copper layer is deposited to fill the via hole and the trench. Next, a copper line is formed by a CMP (chemical mechanical polishing) process to planarize the copper layer, and a plasma process is performed to form a plasma-treated surface layer of the semiconductor substrate. The plasma-treated surface layer is then removed.
13 Citations
18 Claims
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1. A method for manufacturing a semiconductor device, the method comprising:
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forming an insulation layer on a bottom structure of a semiconductor substrate; forming a trench and a via hole by selectively etching the insulation layer; forming a copper layer on an entire surface of the semiconductor substrate until filling the via hole and the trench; planarizing the copper layer by chemical mechanical polishing to form a copper line filling the via hole and the trench; performing a plasma process to form a plasma-treated surface layer on the semiconductor substrate; and removing the plasma-treated surface layer, wherein removing the surface layer of the Semiconductor substrate comprises; performing a radio frequency pre-clean process using an Ar plasma, and a Ge ion implantation process. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device, the method comprising:
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forming an insulation layer on a bottom structure of a semiconductor substrate; forming a trench and a via hole by selectively etching the insulation layer; forming a copper layer on an entire surface of the semiconductor substrate until filling the via hole and the trench; planarizing the copper layer by chemical mechanical polishing to form a copper line filling the via hole and the trench; performing a plasma process to form a plasma-treated surface layer on the semiconductor substrate; and removing the plasma-treated surface layer, wherein removing the surface layer of the semiconductor substrate comprises a Ge ion implantation process.
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9. A method for a semiconductor device, the method comprising:
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forming an insulation layer on a bottom structure of a semiconductor substrate; forming a trench and a via hole by selectively etching the insulation layer; forming a copper layer on an entire surface of the semiconductor substrate until filling the via hole and the trench; planarizing the copper layer by a chemical mechanical polishing process to form a copper line filling the via hole and the trench; amorphizing a surface layer of the semiconductor substrate having the copper line thereon; performing a plasma process to form a plasma-treated, amorphous surface layer; and removing the plasma-treated, amorphous surface layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification