Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors
First Claim
1. An apparatus for reducing leakage current and increasing drive current in a metal-oxide-semiconductor (MOS) transistor having a source terminal, a drain terminal, a gate terminal, and a well terminal, said apparatus comprising:
- a control circuit comprised of at least a forward biased diode formed in an isolated structure connected between said gate terminal and said well terminal of said MOS transistor;
wherein said control circuit effects an increase in the magnitude of the threshold voltage of said MOS transistor when said MOS transistor is in an OFF state and a decrease in the magnitude of the threshold voltage in said MOS transistor when said MOS transistor is in an ON state.
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Accused Products
Abstract
An apparatus and method of manufacture for metal-oxide semiconductor (MOS) transistors is disclosed. Devices in accordance with the invention are operable at voltages below 2V. The devices are area efficient, have improved drive strength, and have reduced leakage current. A dynamic threshold voltage control scheme comprised of a forward biased diode in parallel with a capacitor is used, implemented without changing the existing MOS technology process. This scheme controls the threshold voltage of each transistor. In the OFF state, the magnitude of the threshold voltage of the transistor increases, keeping the transistor leakage to a minimum. In the ON state, the magnitude of the threshold voltage decreases, resulting in increased drive strength. The invention is particularly useful in MOS technology for both bulk and silicon on insulator (SOI) CMOS. The use of reverse biasing of the well, in conjunction with the above construct to further decrease leakage in a MOS transistor, is also shown.
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Citations
49 Claims
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1. An apparatus for reducing leakage current and increasing drive current in a metal-oxide-semiconductor (MOS) transistor having a source terminal, a drain terminal, a gate terminal, and a well terminal, said apparatus comprising:
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a control circuit comprised of at least a forward biased diode formed in an isolated structure connected between said gate terminal and said well terminal of said MOS transistor; wherein said control circuit effects an increase in the magnitude of the threshold voltage of said MOS transistor when said MOS transistor is in an OFF state and a decrease in the magnitude of the threshold voltage in said MOS transistor when said MOS transistor is in an ON state. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 35, 36, 37, 38)
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21. An apparatus for reducing leakage current and increasing drive current in a metal-oxide-semiconductor (MOS) transistor having a source terminal, a drain terminal, a gate terminal, and a well terminal, said apparatus comprising:
- a control circuit comprising a first circuit element comprising at least one forward biased diode, said first circuit element connected between said gate terminal and said well terminal of said MOS transistor;
said control circuit further comprising a second circuit element connected in parallel with said first circuit element, said second circuit element comprising at least a capacitor;
said control circuit effecting an increase in the magnitude of the threshold voltage of said MOS transistor when said MOS transistor is in an OFF state, and a decrease of the magnitude of the threshold voltage in said MOS transistor when said MOS transistor is in an ON state, and controlling a waveform at said well terminal of said MOS transistor; and
said MOS transistor comprising any of an n-channel device and a p-channel device. - View Dependent Claims (22, 23, 24, 25, 26)
- a control circuit comprising a first circuit element comprising at least one forward biased diode, said first circuit element connected between said gate terminal and said well terminal of said MOS transistor;
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27. An apparatus for reducing leakage current and increasing drive current in a metal-oxide-semiconductor (MOS) transistor having a source terminal, a drain terminal, a gate terminal, and a well terminal, said apparatus comprising:
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a control circuit comprised of at least a forward biased diode formed in an isolated structure connected between said gate terminal and said well terminal of said MOS transistor, and wherein said control circuit controls a waveform at said well terminal; wherein said control circuit effects an increase in the magnitude of the threshold voltage of said MOS transistor when said MOS transistor is in an OFF state and a decrease of the magnitude of the threshold voltage in said MOS transistor when said MOS transistor is in an ON state. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 39, 40, 41, 42, 43, 44, 45)
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46. An apparatus for reducing leakage current and increasing drive current in a metal-oxide-semiconductor (MOS) transistor having a source terminal, a drain terminal, a gate terminal, and a well terminal, said apparatus comprising:
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a control circuit comprising a first circuit element comprising at least one forward biased diode, said first circuit element connected between said gate terminal and said well terminal of said MOS transistor; said control circuit further comprising a second circuit element connected in parallel with said first circuit element, said second circuit element comprising at least a capacitor; said control circuit effecting an increase in the magnitude of the threshold voltage of said MOS transistor when said MOS transistor is in an OFF state, and a decrease in the magnitude of the threshold voltage of said MOS transistor when said MOS transistor is in an ON state, and controlling a waveform at said well terminal of said MOS transistor; said MOS transistor comprising any of an n-channel device and a p-channel device; and a means for providing one of; a positive bias to the well of said n-channel device; and a negative bias to the well of said p-channel device. - View Dependent Claims (47, 48, 49)
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Specification