Mm-wave scanning antenna

• US 7,683,844 B2
• Filed: 05/16/2007
• Issued: 03/23/2010
• Est. Priority Date: 05/16/2007
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Alamouti, Siavash, Chistyakov, Nikolav, Artemenko, Alexey, Maltsev, Alexander A.
• Primary Examiner(s): PHAN, THO GIA
• Application Number:
  US11/803,918
• Publication Number:
  US 20080284655A1
• Time in Patent Office: 1,042 Days
• Field of Search: 343/700.MS, 343/876, 343/853, 343/754
• US Class Current: 343/754
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 19/062 for focusing
• CPC Class Codes: H01Q 21/065 Patch antenna array
• CPC Class Codes: H01Q 3/245 in the focal plane of a focussing device

Abstract

In general, in one aspect, the disclosure describes a semiconductor antenna having a plurality of antenna elements and a switching network formed in the same semiconductor die. The switching network is to control activation of the antenna elements.

Claims

1. A semiconductor scanning beam antenna comprising a plurality of antenna elements formed in a semiconductor;

an RF interconnect formed in the semiconductor;

an RF communications tree, formed in the semiconductor, to provide a signal path between the RF interconnect and the plurality of antenna elements; and

a switching network, formed in the RF communications tree, to control activation of the plurality of antenna elements, wherein the switching network is to switch which of the plurality of antenna elements is connected to the RF interconnect responsive to control signals, and wherein switching the antenna element that are connected to the RF interconnect is to provide beam scanning.

2. The antenna of claim 1, wherein the switching network includes at least one switch associated with each antenna element.

3. The antenna of claim 1, wherein the switching network includes a switch for each branch of the RF communications tree.

4. The antenna of claim 1, further comprising pads to receive the control signals from external circuitry and conductors to provide the control signals to the switching network.

5. The antenna of claim 1, wherein the RF interconnect is a pad.

6. The antenna of claim 1, wherein the semiconductor is a highly resistive material.

7. The antenna of claim 1, wherein the semiconductor is GaAs.

8. The antenna of claim 1, wherein the switching network includes a plurality of field effect transistors utilized as switches.

9. The antenna of claim 1, wherein the switching network includes a plurality of Radio Frequency Micro-Electro-Mechanical Systems utilized as switches.

10. The antenna of claim 1, wherein the antenna is installed on an extended hemispherical lens fabricated from high-permittivity dielectric.

11. The antenna of claim 10, wherein the antenna is to communicate with an on-chip radio also installed on the extended hemispherical lens.

12. The antenna of claim 11, wherein the antenna is to communicate with the on-chip radio via a single external RF interconnection also installed on the extended hemispherical lens.