Lithographic device, device manufacturing method and device manufactured thereby

• US 7,684,012 B2
• Filed: 03/29/2006
• Issued: 03/23/2010
• Est. Priority Date: 03/29/2005
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Livesey, Robert Gordon, Mertens, Bastiaan Matthias, Moors, Johannes Hubertus Josephina, Wolschrijn, Bastiaan Theodoor, Jacobs, Johannes Henricus Wilhelmus, Banine, Vadim Yevgenyevich, Ivanov, Vladimir Vitalevitch, Brewster, Barrie Dudley
• Primary Examiner(s): NGUYEN, HUNG
• Application Number:
  US11/391,731
• Publication Number:
  US 20060268246A1
• Time in Patent Office: 1,455 Days
• Field of Search: 355/30, 355/53, 355/67, 355 72- 76, 378/34, 378/35, 250/492.2, 250/548
• US Class Current: 355/67
• CPC Class Codes: G03F 7/70908 Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
• CPC Class Codes: G03F 7/70933 Purge, e.g. exchanging fluid or gas to remove pollutants

Abstract

A lithographic apparatus is configured to project a pattern from a patterning device onto a substrate. The apparatus includes a gas purged sealing aperture extending between at least two different zones of the apparatus, and a gas supplier configured to supply the sealing aperture one or more gases selected from a group including hydrogen, deuterium, heavy hydrogen, deuterated hydrogen, and a mixture of argon and hydrogen.

Claims

1. A lithographic apparatus configured to project a pattern from a patterning device onto a substrate, the apparatus comprising:

a gas purged sealing aperture extending between at least two different zones of the apparatus to seal the zones from each other;

a gas supplier configured to supply the sealing aperture with one or more gases selected from a group comprising hydrogen, deuterium, heavy hydrogen, deuterated hydrogen, and a mixture of argon and hydrogen;

a substrate zone configured to hold at least one substrate; and

an optics zone containing projection optics,

wherein said sealing aperture extends at least between said substrate zone and said optics zone.

2. A lithographic apparatus according to claim 1, wherein said mixture comprises 99% to 1% argon and 1% to 99% hydrogen.

3. A lithographic apparatus according to claim 1, wherein said mixture comprises 79% to 39% argon and 21% to 61% hydrogen.

4. A lithographic apparatus according to claim 1, wherein said different zones comprise:

an illumination zone for an illumination system constructed and arranged to condition a radiation beam;

a patterning device zone for a support constructed and arranged to support a patterning device, the patterning device being arranged to imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; and

a source zone including a radiation source

wherein the optics zone includes a projection optics zone for a projection system constructed and arranged to project the patterned radiation beam onto a target portion of the substrate, and

wherein the substrate zone is configured to include a substrate table constructed and arranged to hold at least one of the substrates.

5. A lithographic apparatus according to claim 1, further comprising a pump constructed and arranged to evacuate at least one of said zones and/or at least part of said aperture, wherein said pump comprises a turbomolecular pump.

6. A lithographic apparatus according to claim 1, wherein said gas supplier comprises a hydrogen reservoir, an argon reservoir, and a supply channel for interconnecting said hydrogen and said argon reservoir to the sealing aperture.

7. A lithographic apparatus according to claim 1, wherein said gas supplier is configured to supply a mixture containing substantially argon and hydrogen to the sealing aperture.

8. A lithographic apparatus according to claim 1, further comprising at least one fluid passage extending between at least two separate zones of the apparatus.

9. A lithographic apparatus according to claim 8, wherein said gas supplier comprises a mixer constructed and arranged to mix hydrogen and argon before the hydrogen and argon is supplied to said fluid passage.

10. A lithographic apparatus according to claim 9, wherein said gas supplier is arranged to supply the hydrogen and argon separately to said fluid passage.

11. A lithographic apparatus according to claim 1, further comprising a gas purification system constructed and arranged to purify the argon, the hydrogen and/or the argon/hydrogen mixture.

12. A lithographic apparatus according to claim 1, wherein the gas supplier is arranged to mix a predetermined gas ratio of hydrogen and argon, and/or to keep a predetermined pre-set gas ratio of hydrogen and argon for a desired time period.

13. A lithographic apparatus according to claim 1, wherein the gas supplier includes one or more valves to control one or more gas flows.

14. A lithographic apparatus according to claim 1, further comprising a control constructed and arranged to control the gas supplier to supply a mixture of at least argon and hydrogen to the sealing aperture.

15. A lithographic apparatus according to claim 1, further comprising:

a radiation system constructed and arranged to supply a projection beam of radiation;

a mask table constructed and arranged to hold a mask;

a substrate table constructed and arranged to hold a substrate; and

a projection system constructed and arranged to image an irradiated portion of the mask onto a target portion of the substrate,

wherein;

a) the projection system is separated from the substrate table by an intervening space which can be at least partially evacuated, said space being partially delimited at the location of the projection system by a solid surface from which the radiation is directed toward the substrate table;

b) the intervening space contains a hollow tube located between the solid surface and the substrate table and situated around the path of the radiation, the form and size of the tube being such that radiation focused by the projection system onto the substrate table does not intercept a wall of the hollow tube; and

c) a flushing device is provided for continually flushing the inside of the hollow tube with a flow of a gas.

16. A lithographic apparatus according to claim 15, wherein there is no member separating the intervening space from the space including the hollow tube;

and wherein the hollow tube contains a region in which a flow of contaminants issuing from the substrate and a flow of the gas are opposed.

17. A lithographic apparatus according to claim 15, wherein the solid surface is a reflecting surface and the optical path from this reflecting surface to the target portion of the substrate held by the substrate table traverses only fluid.

18. A seal for a lithographic apparatus comprising a gas purged sealing aperture extending between two zones of the apparatus, wherein the seal is provided with at least one gas supplier configured to supply the sealing aperture with at least one gas from a group comprising hydrogen, heavy hydrogen, deuterium, deuterated hydrogen, and a mixture of argon and hydrogen so that the two zones of the apparatus are sealed from each other.

19. A device manufacturing method comprising:

projecting a patterned beam of radiation onto a substrate in a lithographic apparatus;

sealing at least two zones of the apparatus from each other with at least one sealing aperture; and

purging said sealing aperture with at least one gas selected from the group comprising hydrogen, helium, deuterated hydrogen, deuterium, heavy hydrogen, and a mixture of argon and hydrogen.

20. A device manufacturing method according to claim 19, wherein the flow rate of the gas is in the range of about 3-100 mbar/min.

21. A data storage medium containing one or more sequences of machine-readable instructions configured to execute a method according to claim 19.