Memory cell for storing a data bit value despite atomic radiation
First Claim
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1. A memory cell for storing a data bit value despite atomic radiation, the memory cell comprising:
- two inverters comprising first and second inverters each having an input pin and an output pin;
an access circuit coupled to the two inverters, the access circuit arranged to write and read the data bit value in the memory cell; and
two switch circuits comprising first and second switch circuits cross coupling the output pins of the first and second inverters to the input pins of the second and first inverters, respectively, the two switch circuits arranged to alternately decouple and couple the input pins and the output pins of the two inverters for limiting corruption from the atomic radiation of the data bit value in the memory cell.
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Abstract
A memory cell stores a data bit value despite atomic radiation. The memory cell includes two inverters, an access circuit, and two switch circuits. Each inverter has an input and an output. The access circuit is arranged to write and read the data bit value in the memory cell. The switch circuits cross couple the outputs of the two inverters to the inputs of the two inverters. The switch circuits are arranged to alternately decouple and couple the inputs of the two inverters to limit corruption from atomic radiation of the data bit value in the memory cell.
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Citations
20 Claims
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1. A memory cell for storing a data bit value despite atomic radiation, the memory cell comprising:
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two inverters comprising first and second inverters each having an input pin and an output pin; an access circuit coupled to the two inverters, the access circuit arranged to write and read the data bit value in the memory cell; and two switch circuits comprising first and second switch circuits cross coupling the output pins of the first and second inverters to the input pins of the second and first inverters, respectively, the two switch circuits arranged to alternately decouple and couple the input pins and the output pins of the two inverters for limiting corruption from the atomic radiation of the data bit value in the memory cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A circuit for storing a data bit value in a memory cell despite atomic radiation, the circuit comprising:
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means for writing the data bit value into the memory cell, the memory cell including first and second inverters; means for transferring the data bit value from an output pin of the first inverter to an input pin of the second inverter via a first switch circuit; means for transferring a complement of the data bit value from an output pin of the second inverter to an input pin of the first inverter via a second switch circuit; means for repeatedly decoupling the input pins of the second and first inverters from the output pins of the first and second inverters with the first and second switch circuits, whereby corruption from the atomic radiation of the data bit value in the memory cell is limited; and means for reading the data bit value from the memory cell. - View Dependent Claims (20)
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Specification