Non-volatile memory array architecture with joined word lines

• US 7,684,245 B2
• Filed: 10/30/2007
• Issued: 03/23/2010
• Est. Priority Date: 10/30/2007
• Status: Active Grant

• Current Assignee: Atmel Corporation (Microchip Technology Incorporated)
• Original Assignee: Atmel Corporation (Microchip Technology Incorporated)
• Inventors: Frulio, Massimiliano, Hui, Edward Shue-Ching, Schumann, Steve, Bedarida, Lorenzo, Bartoli, Simone
• Primary Examiner(s): Pham; Ly D
• Application Number:
  US11/928,086
• Publication Number:
  US 20090109754A1
• Time in Patent Office: 875 Days
• Field of Search: 365/185.05, 365/185.17, 365/63
• US Class Current: 365/185.17
• CPC Class Codes: G11C 16/3418 Disturbance prevention or evaluation; Refreshing of disturbed memory data
• CPC Class Codes: Y10T 29/49002 Electrical device making

Abstract

In an embodiment, a non-volatile memory array wherein narrow word lines, as small as the minimum feature size width F, in separate strings, are extended outwardly from a non-volatile memory array and joined by wider connector segments. The joined word lines provide new opportunities. First, metal straps that can be formed to overlie the word lines can be joined by metal connector segments to the word lines. The connector segments can serve as an interface between the polysilicon word lines and the metal straps. Two adjacent word lines in the same string share a single metal strap using these segments thereby reducing the overall number of segments and contacts in the array. Increased width of the polysilicon joinder segments joining word lines in different strings, provides the opportunity for widening the connection beyond the minimum feature size so that contact may be readily made between the metal straps and the polysilicon word lines. Second, the joined word lines require fewer row decoder circuits. One row decoder is provided for each joined set of word lines.

Claims

1. A non-volatile semiconductor memory array of the type having blocks of rows and columns of memory cells with word lines running parallel to the rows and bit lines running parallel to the columns comprising:

first and second strings of non-volatile memory transistors associated with a bit line in a block in a NAND configuration, each string having a separate select line; and

word line extensions associated with word lines from corresponding rows of the first and second strings electrically joined by joinder segments thereby forming a loop between strings whereby two word lines in different strings are electrically joined.

2. The memory array of claim 1 wherein joinder segments are wider than word line extensions.

3. The memory array of claim 2 wherein the word line extensions have a minimum feature size width, F.

4. The memory array of claim 3 wherein joinder segments have a width greater than F.

5. The memory array of claim 1 wherein the first and second strings are joined at a common source line.

6. The memory array of claim 1 further comprising:

a plurality of metal straps over word lines and word line extensions, with one strap over portions of two word lines; and

a plurality of metal connector segment means for connecting a word line to an associated strap at a joinder segment.

7. The memory array of claim 6 further comprising a plurality of row decoders, a row decoder associated with two word lines in different strings that are electrically joined.

8. The memory array of claim 1 being mirrored in a plurality of blocks.

9. A non-volatile memory array comprising:

rows and columns of non-volatile memory transistors having a plurality of parallel word lines, one word line associated with each row, and a plurality of bit lines, both the word lines and the bit lines extending from the array, the array having strings of memory transistors in a column in a NAND arrangement and associated with a common bit line, with corresponding memory transistors in first and second strings having joined word lines; and

means for selecting among the strings associated with the bit lines.

10. The memory array of claim 9 wherein word lines in the array have a first width portion and word lines extending from the array have a second width portion wider than the first width portion.

11. The apparatus of claim 10 further comprising:

a plurality of metal straps parallel to the word lines in the array with metal straps above the word lines; and

a plurality of metal connector segment means for connecting a word line to an associated strap, the connection being outside of the array at a location where a word line segment has said second width portion.

12. The memory array of claim 11 wherein adjacent word lines in the array share a metal strap.

13. The memory array of claim 11 wherein the plurality of metal straps are in a metal 2 layer and the plurality of metal connector segment means are in a metal one layer.

14. The memory array of claim 9 wherein the array comprises mirror image halves, with each half being an independent memory block.

15. The memory array of claim 9 further comprising a plurality of row decoders, a row decoder associated with two word lines in different strings that are electrically joined.

16. The memory array of claim 14 further comprising a plurality of row decoders, a row decoder associated with two word lines in different strings that are electrically joined.

17. The memory array of claim 9 wherein the word line segments in the array have a dimension equal to a minimum feature size F.

18. The memory array of claim 9 wherein the word line segments in the array have a spacing between word lines at least equal to a minimum feature size F.

19. The memory array of claim 9 wherein the word line regions outside of the array have a dimension of at least 2F where F is a minimum feature size.

20. The memory array of claim 9 wherein word line segments outside of the array are nested.

21. The memory array of claim 20 wherein the word line segments outside of the array have a nested U-shape in joining word lines from the two strings.

22. A method of making a non-volatile memory array of the type having rows and columns of memory transistors with word lines and bit lines corresponding to the rows and columns comprising:

arranging the memory transistors in selectable strings in a NAND arrangement;

extending word lines outside of the array to provide word line extensions; and

connecting word lines of corresponding transistors of different strings using extensions of the word lines.

23. The method of claim 22 further defined by:

providing metal straps over the word lines and portions of the word line extensions;

joining the metal straps to the word lines.

24. The method of claim 22 further defined by:

connecting word lines of corresponding transistors by a plurality of nested word line loops.

25. The method of claim 22 further defined by making the characteristic dimension of the word lines and word line extensions equal to the minimum feature size.