Oscillator and imaging apparatus utilizing resonant tunneling diode structure

• US 7,684,455 B2
• Filed: 08/03/2007
• Issued: 03/23/2010
• Est. Priority Date: 08/25/2006
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Ouchi, Toshihiko, Sekiguchi, Ryota
• Primary Examiner(s): Pascal; Robert
• Assistant Examiner(s): JOHNSON, RYAN
• Application Number:
  US11/833,781
• Publication Number:
  US 20080048792A1
• Time in Patent Office: 963 Days
• Field of Search: 331/107.T, 331/107.SL, 257/104, 257/46, 257/615, 257/11, 257/14, 257/15, 257/18, 257/25, 257/E29.042, 257/E29.339, 257/E29.34, 257/E29.341, 257/E21.353, 257/E21.367, 372/43.01, 372/45.01, 372/45.011
• US Class Current: 372/45.011
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H01L 29/201 including two or more compounds , e.g. alloys H01L29/2006 takes precedence
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/882 Resonant tunneling diodes, i.e. RTD, RTBD
• CPC Class Codes: H03B 7/08 being a tunnel diode

Abstract

An oscillator including a substrate and a resonant tunneling diode including a gain medium provided on the substrate. The gain medium includes at least two quantum well layers and plural barrier layers for separating the quantum well layers from each other. The quantum well layers each have one of a compressive strain and a tensile strain. The plural barrier layers that sandwich the quantum well layers having the strain have a strain in a direction opposite to the direction of the strain of the quantum well layers.

Claims

1. An oscillator for oscillating an electromagnetic wave, comprising:

a substrate; and

a resonant tunneling diode provided on the substrate,

wherein the resonant tunneling diode comprises at least two quantum well layers and plural barrier layers for separating the quantum well layers from each other,

wherein the two quantum well layers each has a lattice constant different from a lattice constant of the substrate and a film thickness smaller than a critical film thickness,

wherein the plural barrier layers include a first barrier layer sandwiched by the two quantum well layers;

wherein the first barrier layer has such a film thickness that carriers are able to be subjected to a photon assist tunnel between sub-bands of the two quantum well layers, and

wherein a strain of the first barrier layer and the two quantum well layers is compensated by a strain of a barrier layer among the plural barrier layers that is not sandwiched by the two quantum well layers.

2. An oscillator according to claim 1, wherein the substrate is an InP substrate;

wherein the quantum well layers are one of InGaAs and InAs each having an In composition of 60% or more and 100% or less; and

wherein the barrier layers include at least two layers of InAlAs whose In composition is 0% or more and 50% or less and of one of AlAs and AlAsSb.

3. An oscillator according to claim 1, wherein

the substrate is an InAs substrate;

and

wherein the gain medium comprises at least an InAsSb well layer and one of an InAlAs barrier layer and an AlAsSb barrier layer.

4. An oscillator according to claim 1, wherein the substrate is a GaSb substrate;

and

wherein the gain medium comprises at least one of an InAsSb well layer and an InGaSb well layer and one of an InAlAs barrier layer and an AlAsSb barrier layer.

5. An oscillator according to claim 1, wherein the substrate is a GaN substrate;

and

wherein the gain medium comprises at least an InGaN well layer and an AlGaN barrier layer.

6. An oscillator according to claim 1, wherein the electromagnetic wave includes at least a part of a frequency region ranging from 30 GHz to 30 THz.

7. An oscillator according to claim 1, further comprising a resonator for oscillating a terahertz wave generated from the resonant tunneling diode, wherein the resonator comprises at least a transmission line and an antenna.

8. An oscillator according to claim 1, further comprising a resonator for oscillating a terahertz wave generated from the resonant tunneling diode, wherein the resonator comprises a stripe surface plasmon transmission line and a reflecting surface at an end portion of the transmission line.

9. An oscillator according to claim 8, wherein a propagation constant of the stripe surface plasmon transmission line is periodically changed along a propagation direction of the electromagnetic wave, thereby causing the electromagnetic wave to become a standing wave by Bragg reflection.

10. A sensing apparatus, comprising the oscillator according to claim 1, which is used as an oscillation source, wherein an interaction between an electromagnetic wave having a part of a frequency region ranging from 30 GHz to 30 THz and an object to be inspected is inspected.

11. An imaging apparatus, comprising the oscillator according to claim 1, which is used as an oscillation source, wherein

an interaction between an electromagnetic wave having a part of a frequency region ranging from 30 GHz to 30 THz and an object to be inspected is two-dimensionally inspected to obtain image data.

12. An oscillator according to claim 1, further comprising a carrier injecting unit for injecting carriers to the resonant tunneling diode.

13. An oscillator for oscillating an electromagnetic wave, comprising:

a substrate; and

a resonant tunneling diode provided on the substrate,

wherein the resonant tunneling diode comprises;

a first barrier layer that has a lattice constant different from a lattice constant of the substrate and has a film thickness smaller than a critical film thickness;

a first quantum well layer that is in contact with the first barrier layer, has a lattice constant different from the lattice constant of the substrate, and has a film thickness smaller than the critical film thickness;

a second barrier layer that is in contact with the first quantum well layer, has a film thickness smaller than the critical film thickness, and is so constructed that carriers in a sub-band of the first quantum well layer are able to be subjected to a photon assist tunnel;

a second quantum well layer that is in contact with the second barrier layer, is arranged on a side opposite to the first quantum well layer via the second barrier layer, has a lattice constant different from the lattice constant of the substrate, and has a film thickness smaller than the critical film thickness; and

a third barrier layer that is in contact with the second quantum well layer, has a lattice constant different from the lattice constant of the substrate, and has a film thickness smaller than the critical film thickness,

wherein a strain of the second barrier layer and the first and second quantum well layers is compensated by a strain of the first and third barrier layers.

14. An oscillator according to claim 13, wherein the second barrier layer has a lattice constant that is matched with a lattice constant of the substrate.