×

Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition

  • US 7,687,293 B2
  • Filed: 01/19/2007
  • Issued: 03/30/2010
  • Est. Priority Date: 01/20/2006
  • Status: Active Grant
First Claim
Patent Images

1. A method for enhancing growth of a device-quality planar semipolar nitride semiconductor film comprising:

  • (a) depositing a semipolar nitride semiconductor film on an (Al,In,Ga)N nucleation or buffer layer comprising at least some indium, wherein an area of the semipolar nitride semiconductor film is substantially parallel to a substrate surface upon which the (Al,In,Ga)N nucleation or buffer layer is grown.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×