Nitride semiconductor device and method of manufacturing the same
First Claim
1. A method of manufacturing a nitride semiconductor device by means of vapor deposition, the method comprising the steps of:
- forming an n-type nitride semiconductor layer on a nitride crystal growth substrate;
forming an active layer on the n-type nitride semiconductor layer;
forming a first p-type nitride semiconductor layer on the active layer;
forming a micro-structured current diffusion pattern on the first p-type nitride semiconductor layer, the current diffusion pattern being made of an insulation material;
forming a second p-type nitride semiconductor layer on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon;
forming a mask pattern on the upper surface of the second p-type nitride semiconductor layer in the same manner as the current diffusion pattern; and
etching the upper surface of the second p-type nitride semiconductor layer through the use of the mask pattern.
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Abstract
The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer is formed on the active layer. A micro-structured current diffusion pattern is formed on the first p-type nitride semiconductor layer. The current diffusion pattern is made of an insulation material. A second p-type nitride semiconductor layer is formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon.
23 Citations
6 Claims
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1. A method of manufacturing a nitride semiconductor device by means of vapor deposition, the method comprising the steps of:
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forming an n-type nitride semiconductor layer on a nitride crystal growth substrate; forming an active layer on the n-type nitride semiconductor layer; forming a first p-type nitride semiconductor layer on the active layer; forming a micro-structured current diffusion pattern on the first p-type nitride semiconductor layer, the current diffusion pattern being made of an insulation material; forming a second p-type nitride semiconductor layer on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon; forming a mask pattern on the upper surface of the second p-type nitride semiconductor layer in the same manner as the current diffusion pattern; and etching the upper surface of the second p-type nitride semiconductor layer through the use of the mask pattern. - View Dependent Claims (2, 3, 4)
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5. A method of manufacturing a nitride semiconductor device by means of vapor deposition, the method comprising the steps of:
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forming an n-type nitride semiconductor layer on a nitride crystal growth substrate; forming an active layer on the n-type nitride semiconductor layer; forming a first p-type nitride semiconductor layer on the active layer; forming a micro-structured current diffusion pattern on the first p-type nitride semiconductor layer, the current diffusion pattern being made of an insulation material; and forming a second p-type nitride semiconductor layer on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon; wherein the thickness of the current diffusion pattern is not more than approximately 10 Å
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6. A method of manufacturing a nitride semiconductor device by means of vapor deposition, the method comprising the steps of:
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forming an n-type nitride semiconductor layer on a nitride crystal growth substrate; forming an active layer on the n-type nitride semiconductor layer; forming a first p-type nitride semiconductor layer on the active layer; forming a micro-structured current diffusion pattern on the first p-type nitride semiconductor layer, the current diffusion pattern being made of an insulation material; and forming a second p-type nitride semiconductor layer on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon; wherein the n-type nitride semiconductor layer forming step comprises the sub-steps of; forming a first n-type nitride semiconductor layer on the upper surface of the substrate; forming a silicon nitride pattern on the first n-type nitride semiconductor layer, the silicon nitride pattern being arranged in a nano-sized dot structure; and forming a second n-type nitride semiconductor layer on the first n-type nitride semiconductor layer having the silicon nitride pattern formed thereon.
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Specification