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Semiconductor device and manufacturing method thereof

  • US 7,687,325 B2
  • Filed: 08/13/2004
  • Issued: 03/30/2010
  • Est. Priority Date: 03/13/2000
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor device comprising:

  • a first step of forming a gate wiring and a plurality of convex portions in a pixel portion by using a first mask;

    a second step of forming an insulating film covering said gate wiring and said plurality of convex portions;

    a third step of forming a first amorphous semiconductor film on said insulating film;

    a fourth step of forming a second amorphous semiconductor film, containing an impurity element which imparts n-type conductivity, on said first amorphous semiconductor film;

    a fifth step of forming a first conductive film on said second amorphous semiconductor film;

    a sixth step of forming a second mask on the first conductive film;

    a seventh step of sequentially patterning said first conductive film, said second amorphous semiconductor film and said first amorphous semiconductor film, by using the second mask;

    thereby forming a wiring from said first conductive film;

    an eighth step of forming a second conductive film contacting and overlapping said wiring;

    a ninth step of patterning said second conductive film, said wiring, said second amorphous semiconductor film and a portion of said first amorphous semiconductor film, by using a third mask, sequentially, thereby forming a pixel electrode made from said second conductive film, a source wiring and a drain electrode made from said wiring, and a source region and a drain region made from the second amorphous semiconductor film.

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