Method for manufacturing semiconductor device
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising the steps of:
- forming a buffer oxide film on a semiconductor substrate;
forming a high-voltage well region in the semiconductor substrate by performing a first ion implantation at a relatively low energy, a second ion implantation at a medium energy, and a third ion implantation at a relatively high energy;
forming a pad nitride film on the buffer oxide film;
patterning the pad nitride film and the buffer oxide film and forming an isolation layer on the semiconductor substrate;
removing the patterned pad nitride film;
implanting first dopants into the high-voltage well region, thereby forming a low-voltage well region within the high-voltage well region;
forming a gate electrode on the semiconductor substrate; and
implanting second dopants into the low-voltage well region using the gate electrode as a mask, thereby forming source/drain regions within the low-voltage well region.
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Abstract
Disclosed is a method of manufacturing a semiconductor device, which includes the steps of: forming a high-voltage well region (e.g., by implanting impurity ions into a semiconductor substrate and then annealing); forming an isolation layer on the semiconductor substrate; implanting impurity ions into the high-voltage well region, thereby forming a low-voltage well region within the high-voltage well region; forming a gate electrode on the semiconductor substrate; and implanting impurity ions using the gate electrode as a mask, thereby forming source/drain regions within the low-voltage well region.
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17 Claims
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1. A method of manufacturing a semiconductor device, the method comprising the steps of:
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forming a buffer oxide film on a semiconductor substrate; forming a high-voltage well region in the semiconductor substrate by performing a first ion implantation at a relatively low energy, a second ion implantation at a medium energy, and a third ion implantation at a relatively high energy; forming a pad nitride film on the buffer oxide film; patterning the pad nitride film and the buffer oxide film and forming an isolation layer on the semiconductor substrate; removing the patterned pad nitride film; implanting first dopants into the high-voltage well region, thereby forming a low-voltage well region within the high-voltage well region; forming a gate electrode on the semiconductor substrate; and implanting second dopants into the low-voltage well region using the gate electrode as a mask, thereby forming source/drain regions within the low-voltage well region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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