System and method for manufacturing thick and thin film devices using a donee layer cleaved from a crystalline donor
First Claim
1. A method of making an electronic and/or optoelectronic device structure by layer transfer, comprising:
- providing a crystalline donor having a first free surface and a plurality of intrinsic cleavage planes spaced from one another and each substantially parallel to the first surface, wherein the first free surface and a particular one of the plurality of intrinsic cleavage planes defining a first donee layer;
fabricating a device layer containing at least one device upon the first donee layer so that the at least one device is monolithic with the first donee layer, said at least one device being either one of an electronic type and an optoelectronic type;
securing a first handle to either the device layer or the first free surface of the first donee layer; and
cleaving the first donee layer from the crystalline donor along the particular one of the plurality of intrinsic cleavage planes so as to liberate the first donee layer, in combination with the first handle, from the crystalline donor.
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Accused Products
Abstract
Various embodiments of fabricated crystalline-based structures for the electronics, optoelectronics and optics industries are disclosed. Each of these structures is created in part by cleaving a donee layer from a crystalline donor, such as a micaceous/lamellar mass comprising a plurality of lamelliform sheets separable from each other along relatively weak cleavage planes. Once cleaved, one or more of these lamelliform sheets become the donee layer. The donee layer may be used for a variety of purposes, including a crystalline layer for supporting heteroepitaxial growth of one or more semiconductor layers thereon, an insulating layer, a barrier layer, a planarizing layer and a platform for creating useful structures, among others.
235 Citations
33 Claims
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1. A method of making an electronic and/or optoelectronic device structure by layer transfer, comprising:
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providing a crystalline donor having a first free surface and a plurality of intrinsic cleavage planes spaced from one another and each substantially parallel to the first surface, wherein the first free surface and a particular one of the plurality of intrinsic cleavage planes defining a first donee layer; fabricating a device layer containing at least one device upon the first donee layer so that the at least one device is monolithic with the first donee layer, said at least one device being either one of an electronic type and an optoelectronic type; securing a first handle to either the device layer or the first free surface of the first donee layer; and cleaving the first donee layer from the crystalline donor along the particular one of the plurality of intrinsic cleavage planes so as to liberate the first donee layer, in combination with the first handle, from the crystalline donor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of manufacturing a plurality of electronic and/or optoelectronic device structures, comprising:
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providing a crystalline donor having a plurality of intrinsic cleavage planes defining a plurality of donee layers; forming a device layer on each of the plurality of donee layers, the device layer including at least one of
1) an electronic device and
2) an optoelectronic device; andcleaving each of the plurality of donee layers from the crystalline donor along a corresponding one of the plurality of intrinsic cleavage planes in succession with one another so as to liberate that one of the plurality of donee layers from the crystalline donor. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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26. A method of making an electronic and/or optoelectronic device by layer transfer, comprising:
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fabricating a first device component by; providing a crystalline donor having a first free surface and a plurality of intrinsic cleavage planes spaced from one another and each substantially parallel to the first surface, wherein the first free surface and a particular one of the plurality of intrinsic cleavage planes defining a first donee layer; fabricating a first device layer containing at least one device upon the first donee layer so that said at least one device is monolithic with the first donee layer, said at least one device being either one of an electronic type and an optoelectronic type; securing a first handle to either the device layer or the first free surface of the first donee layer; and cleaving the first donee layer from the crystalline donor along the particular one of the plurality of intrinsic cleavage planes so as to liberate the first donee layer, in combination with the first handle, from the crystalline donor; providing a second device component comprising a second device layer and a second handle fixed relative to the second device layer; and laminating the first and second device components with one another. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33)
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Specification