Group III nitride compound semiconductor light emitting element, light emitting device using the light emitting element: and method for manufacturing the light emitting element

• US 7,687,817 B2
• Filed: 04/03/2007
• Issued: 03/30/2010
• Est. Priority Date: 04/04/2006
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Uemura, Toshiya
• Primary Examiner(s): Soward; Ida M
• Application Number:
  US11/730,687
• Publication Number:
  US 20070228409A1
• Time in Patent Office: 1,092 Days
• Field of Search: 257/13, 257 79- 80, 257/86, 257/88, 257/94, 257 98-103, 257/E33.055, 257/E33.056, 257/E33.059, 257/E33.074
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/0102 Calcium [Ca]
• CPC Class Codes: H01L 2924/01025 Manganese [Mn]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/52 Encapsulations

Abstract

To provide a light emitting element that can extract substantially all the light emitted from a luminous layer structure to the outside, a GaN substrate and a luminous layer structure are formed by growing III nitride compound semiconductor on a sapphire substrate that is a growth substrate. Thereafter, the sapphire substrate is lifted off and minute irregularities are formed on the exposed GaN substrate. The pitch of irregularities is shorter than the wavelength of light emitted from the luminous layer structure.

Claims

1. A light emitting device, comprising:

a light emitting element, comprising;

a substrate comprising group III nitride compound semiconductor;

a luminous layer structure comprising group III nitride compound semiconductor, said luminous layer structure formed on a first surface of said substrate; and

an irregular surface formed on a second surface of said substrate, a pitch of said irregular surface being shorter than a wavelength of light emitted from said luminous layer structure, said second surface comprising a principal light emission surface; and

a translucent sealing member for sealing said light emitting element, said translucent sealing member being separated from said second surface,

wherein one of a translucent gel material and an inert gas is filled between said light emitting element and said translucent sealing member.

2. The light emitting device according to claim 1, wherein said translucent gel material comprises at least one of a silicon gel, a polyimide, and a fluoride gel.

3. The light emitting device according to claim 1, wherein said translucent sealing member comprises a resin.

4. The light emitting device according to claim 1, wherein said translucent sealing member comprises a resin, and

wherein said resin comprises an epoxy resin.

5. The light emitting device according to claim 1, wherein said translucent sealing member comprises a resin, and

wherein phosphor grains are dispersed in said resin.

6. The light emitting device according to claim 1, wherein the light emitting element is mounted on a base substance, and

wherein a reflecting member is formed on the base substance surrounding the light emitting element.

7. The light emitting device according to claim 1, wherein an inner surface of the translucent sealing member is formed in a spherical surface.

8. The light emitting device according to claim 1, wherein an outer surface of the translucent sealing member is formed in a spherical surface.