Insulated gate bipolar conduction transistors (IBCTS) and related methods of fabrication
First Claim
1. An insulated gate bipolar conduction transistor (IBCT), comprising:
- a drift layer having a first conductivity type;
an emitter well region in the drift layer and having a second conductivity type opposite the first conductivity type;
a well region in the drift layer and having the second conductivity type, wherein the well region is spaced apart from the emitter well region and wherein a space between the emitter well region and the well region defines a JFET region of the IBCT;
an emitter region in the well region and having the first conductivity type; and
a buried channel layer on the emitter well region, the well region and the JFET region and the buried channel layer having the first conductivity type.
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Abstract
Insulated gate bipolar conduction transistors (IBCTs) are provided. The IBCT includes a drift layer having a first conductivity type. An emitter well region is provided in the drift layer and has a second conductivity type opposite the first conductivity type. A well region is provided in the drift layer and has the second conductivity type. The well region is spaced apart from the emitter well region. A space between the emitter well region and the well region defines a JFET region of the IBCT. An emitter region is provided in the well region and has the first conductivity type and a buried channel layer is provided on the emitter well region, the well region and the JFET region and has the first conductivity type. Related methods of fabrication are also provided.
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Citations
28 Claims
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1. An insulated gate bipolar conduction transistor (IBCT), comprising:
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a drift layer having a first conductivity type; an emitter well region in the drift layer and having a second conductivity type opposite the first conductivity type; a well region in the drift layer and having the second conductivity type, wherein the well region is spaced apart from the emitter well region and wherein a space between the emitter well region and the well region defines a JFET region of the IBCT; an emitter region in the well region and having the first conductivity type; and a buried channel layer on the emitter well region, the well region and the JFET region and the buried channel layer having the first conductivity type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An insulated gate bipolar conduction transistor (IBCT), comprising:
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a drift layer having a first conductivity type; an emitter well region in the drift layer and having a second conductivity type opposite the first conductivity type; a well region in the drift layer and having the second conductivity type, wherein the well region is spaced apart from the emitter well region and wherein a space between the emitter well region and the well region defines a JFET region of the IBCT; an emitter region in the well region and having the first conductivity type; and a buried channel layer on the emitter well region, the well region and the JFET region, the buried channel layer having the first conductivity type, wherein the IBCT has a differential on-resistance of 50 mΩ
·
cm2 at a gate bias of −
16V at 25°
C.
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15. A method of forming an insulated gate bipolar conduction transistor (IBCT), comprising:
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providing a drift layer having a first conductivity type; providing an emitter well region in the drift layer and having a second conductivity type opposite the first conductivity type; providing a well region in the drift layer and having the second conductivity type, wherein the well region is spaced apart from the emitter well region and wherein a space between the emitter well region and the well region defines a JFET region of the IBCT; providing an emitter region in the well region and having the first conductivity type; and providing a buried channel layer on the emitter well region, the well region and the JFET region and the buried channel layer having the first conductivity type. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method of forming an insulated gate bipolar conduction transistor (IBCT), comprising:
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providing a drift layer having a first conductivity type; providing an emitter well region in the drift layer and having a second conductivity type opposite the first conductivity type; providing a well region in the drift layer and having the second conductivity type, wherein the well region is spaced apart from the emitter well region and wherein a space between the emitter well region and the well region defines a JFET region of the IBCT; providing an emitter region in the well region and having the first conductivity type; and providing a buried channel layer on the emitter well region, the well region and the JFET region and having the first conductivity type, wherein the IBCT has a differential on-resistance of 50 mΩ
·
cm2 at a gate bias of −
16V at 25°
C.
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27. A silicon carbide insulated gate bipolar conduction transistor (IBCT), comprising:
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an n-type conductivity silicon carbide substrate; a p-type silicon carbide drift layer on the silicon carbide substrate; an n-type silicon carbide emitter well region in the p-type silicon carbide drift layer; an n-type silicon carbide well region in the p-type silicon carbide drift layer, wherein the n-type silicon carbide well region is spaced apart from the n-type silicon carbide emitter well region and wherein a space between the n-type silicon carbide emitter well region and the n-type silicon carbide well region defines a JFET region of the IBCT; a p-type silicon carbide emitter region in the well region; and a p-type silicon carbide buried channel layer on the emitter well region, the well region and the JFET region.
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28. An insulated gate bipolar conduction transistor (IBCT), comprising:
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a semiconductor layer having a first conductivity type; an emitter well region in the semiconductor layer and having a second conductivity type opposite the first conductivity type; a well region in the semiconductor layer and having the second conductivity type, wherein the well region is spaced apart from the emitter well region; an emitter region in the well region and having the first conductivity type; and a contact region in the well region, the contact region being adjacent the emitter region and having the second conductivity type.
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Specification