Insulated gate bipolar conduction transistors (IBCTS) and related methods of fabrication
First Claim
1. An insulated gate bipolar conduction transistor (IBCT), comprising:
- a drift layer having a first conductivity type;
an emitter well region in the drift layer and having a second conductivity type opposite the first conductivity type;
a well region in the drift layer and having the second conductivity type, wherein the well region is spaced apart from the emitter well region and wherein a space between the emitter well region and the well region defines a JFET region of the IBCT;
an emitter region in the well region and having the first conductivity type; and
a buried channel layer on the emitter well region, the well region and the JFET region and the buried channel layer having the first conductivity type.
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Abstract
Insulated gate bipolar conduction transistors (IBCTs) are provided. The IBCT includes a drift layer having a first conductivity type. An emitter well region is provided in the drift layer and has a second conductivity type opposite the first conductivity type. A well region is provided in the drift layer and has the second conductivity type. The well region is spaced apart from the emitter well region. A space between the emitter well region and the well region defines a JFET region of the IBCT. An emitter region is provided in the well region and has the first conductivity type and a buried channel layer is provided on the emitter well region, the well region and the JFET region and has the first conductivity type. Related methods of fabrication are also provided.
55 Citations
28 Claims
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1. An insulated gate bipolar conduction transistor (IBCT), comprising:
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a drift layer having a first conductivity type; an emitter well region in the drift layer and having a second conductivity type opposite the first conductivity type; a well region in the drift layer and having the second conductivity type, wherein the well region is spaced apart from the emitter well region and wherein a space between the emitter well region and the well region defines a JFET region of the IBCT; an emitter region in the well region and having the first conductivity type; and a buried channel layer on the emitter well region, the well region and the JFET region and the buried channel layer having the first conductivity type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An insulated gate bipolar conduction transistor (IBCT), comprising:
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a drift layer having a first conductivity type; an emitter well region in the drift layer and having a second conductivity type opposite the first conductivity type; a well region in the drift layer and having the second conductivity type, wherein the well region is spaced apart from the emitter well region and wherein a space between the emitter well region and the well region defines a JFET region of the IBCT; an emitter region in the well region and having the first conductivity type; and a buried channel layer on the emitter well region, the well region and the JFET region, the buried channel layer having the first conductivity type, wherein the IBCT has a differential on-resistance of 50 mΩ
·
cm2 at a gate bias of −
16V at 25°
C.
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15. A method of forming an insulated gate bipolar conduction transistor (IBCT), comprising:
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providing a drift layer having a first conductivity type; providing an emitter well region in the drift layer and having a second conductivity type opposite the first conductivity type; providing a well region in the drift layer and having the second conductivity type, wherein the well region is spaced apart from the emitter well region and wherein a space between the emitter well region and the well region defines a JFET region of the IBCT; providing an emitter region in the well region and having the first conductivity type; and providing a buried channel layer on the emitter well region, the well region and the JFET region and the buried channel layer having the first conductivity type. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method of forming an insulated gate bipolar conduction transistor (IBCT), comprising:
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providing a drift layer having a first conductivity type; providing an emitter well region in the drift layer and having a second conductivity type opposite the first conductivity type; providing a well region in the drift layer and having the second conductivity type, wherein the well region is spaced apart from the emitter well region and wherein a space between the emitter well region and the well region defines a JFET region of the IBCT; providing an emitter region in the well region and having the first conductivity type; and providing a buried channel layer on the emitter well region, the well region and the JFET region and having the first conductivity type, wherein the IBCT has a differential on-resistance of 50 mΩ
·
cm2 at a gate bias of −
16V at 25°
C.
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27. A silicon carbide insulated gate bipolar conduction transistor (IBCT), comprising:
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an n-type conductivity silicon carbide substrate; a p-type silicon carbide drift layer on the silicon carbide substrate; an n-type silicon carbide emitter well region in the p-type silicon carbide drift layer; an n-type silicon carbide well region in the p-type silicon carbide drift layer, wherein the n-type silicon carbide well region is spaced apart from the n-type silicon carbide emitter well region and wherein a space between the n-type silicon carbide emitter well region and the n-type silicon carbide well region defines a JFET region of the IBCT; a p-type silicon carbide emitter region in the well region; and a p-type silicon carbide buried channel layer on the emitter well region, the well region and the JFET region.
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28. An insulated gate bipolar conduction transistor (IBCT), comprising:
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a semiconductor layer having a first conductivity type; an emitter well region in the semiconductor layer and having a second conductivity type opposite the first conductivity type; a well region in the semiconductor layer and having the second conductivity type, wherein the well region is spaced apart from the emitter well region; an emitter region in the well region and having the first conductivity type; and a contact region in the well region, the contact region being adjacent the emitter region and having the second conductivity type.
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Specification