III-nitride materials including low dislocation densities and methods associated with the same
First Claim
1. A semiconductor structure comprising:
- a substrate;
a III-nitride material region formed on the substrate and having a screw dislocation density of less than 108/cm2 throughout the III-nitride material region;
a gallium nitride material region formed on the III-nitride region material and having a screw dislocation density of less than 108/cm2 throughout the gallium nitride material region,wherein the gallium nitride material region has an area of greater than 1 mm×
1 mm.
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Abstract
Semiconductor structures including one, or more, III-nitride material regions (e.g., gallium nitride material region) and methods associated with such structures are provided. The III-nitride material region(s) advantageously have a low dislocation density and, in particular, a low screw dislocation density. In some embodiments, the presence of screw dislocations in the III-nitride material region(s) may be essentially eliminated. The presence of a strain-absorbing layer underlying the III-nitride material region(s) and/or processing conditions can contribute to achieving the low screw dislocation densities. In some embodiments, the III-nitride material region(s) having low dislocation densities include a gallium nitride material region which functions as the active region of the device. The low screw dislocation densities of the active device region (e.g., gallium nitride material region) can lead to improved properties (e.g., electrical and optical) by increasing electron transport, limiting non-radiative recombination, and increasing compositional/growth uniformity, amongst other effects.
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Citations
37 Claims
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1. A semiconductor structure comprising:
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a substrate; a III-nitride material region formed on the substrate and having a screw dislocation density of less than 108/cm2 throughout the III-nitride material region; a gallium nitride material region formed on the III-nitride region material and having a screw dislocation density of less than 108/cm2 throughout the gallium nitride material region, wherein the gallium nitride material region has an area of greater than 1 mm×
1 mm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor structure comprising:
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a III-nitride material region including an area having dimensions of at least 100 microns×
100 microns and a screw dislocation density of less than 104/cm2; anda strain-absorbing layer, wherein the III-nitride material region is formed on the strain-absorbing layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21)
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22. A semiconductor structure comprising:
a III-nitride material region having a screw dislocation density of zero and an edge dislocation density of greater than 108/cm2, wherein the III-nitride material region has an area having dimensions of at least 100 micron×
100 micron.- View Dependent Claims (23, 24, 25, 26)
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27. A semiconductor structure comprising:
a III-nitride material region having density of edge dislocation density and a screw dislocations, the density of edge dislocations being at least 104 times greater than the density of screw dislocations, wherein the III-nitride material region has an area having dimensions of at least 1 mm×
1 mm.- View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36)
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37. A semiconductor structure comprising:
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a substrate; a silicon nitride-based material layer having a thickness of less than 100 Angstroms and covering an entire top surface of the substrate; and a III-nitride material region formed over the silicon nitride-based material layer and having a screw dislocation density of less than about 108/cm2.
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Specification