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Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys

  • US 7,687,834 B2
  • Filed: 11/03/2008
  • Issued: 03/30/2010
  • Est. Priority Date: 10/28/2005
  • Status: Expired due to Fees
First Claim
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1. A junction field effect transistor (JFET), comprising:

  • a source region of a first conductivity type;

    a drain region of the first conductivity type which is spaced apart from the source region;

    a channel region of the first conductivity type which is located between the source and drain regions, wherein the channel region has a maximum length of less than 100 nm;

    a gate region of a second conductivity type which is formed on top of the channel region;

    a gate electrode region of the second conductivity type which overlays the gate region, wherein the gate electrode region comprises a high band gap material; and

    wherein the high band gap material facilitates a faster switching speed and lower power consumption of the JFET as compared to a different JFET that does not use the high band gap material in the gate electrode region.

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