Micromachined, piezoelectric vibration-induced energy harvesting device and its fabrication

• US 7,687,977 B2
• Filed: 04/10/2006
• Issued: 03/30/2010
• Est. Priority Date: 04/10/2006
• Status: Expired due to Fees

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Xu, Zheng Yi-Daniel
• Primary Examiner(s): SAN MARTIN, JAYDI A
• Application Number:
  US11/402,017
• Publication Number:
  US 20070284969A1
• Time in Patent Office: 1,450 Days
• Field of Search: 310330-332, 310/339
• US Class Current: 310/339
• CPC Class Codes: H10N 30/01 Manufacture or treatment
• CPC Class Codes: H10N 30/306 Cantilevers

Abstract

A micro-sized power source. A piezoelectric power generator, capable of harvesting energy from environmental vibration with lower level frequency, including a dielectric frame loosely containing a piezoelectric panel. The piezoelectric panel includes an electrode and a piezoelectric layer formed over an electrode and dielectric layer and an end mass formed on the piezoelectric layer. The end mass provides weight to cause the piezoelectric panel to move (vibrate) within the frame and causes the generation of electrical power.

Claims

1. A micro-sized power source, comprising:

a dielectric frame having a cantilever beam, the cantilever beam comprising a piezoelectric panel placed in between a lower electrode pad and an upper electrode pad;

a silicon wafer positioned between two dielectric layers, said silicon wafer having a top surface and a bottom surface to form said dielectric frame; and

an end mass formed on the piezoelectric panel, the end mass providing weight to cause the piezoelectric panel to move within the dielectric frame and generate electrical power.

2. The micro-sized power source of claim 1 wherein a movement of the panel within the frame causes a generation of said electrical power used to power a microelectronic system.

3. The micro-sized power source of claim 1 wherein said electrical power is accessed electrically from a connection to the lower electrode pad and upper electrode pad.

4. The micro-sized power source of claim 1 wherein the lower electrode pad and the upper electrode pad comprise at least one of:

platinum, titanium, and chromium.

5. The micro-sized power source of claim 1 wherein the lower electrode pad and upper electrode pad are comprised of a thickness in a range of 100 nm to 400 nm.

6. The micro-sized power source of claim 5 wherein said micro-sized power source operates with a low frequency, equal to or less than a 1000 Hz, vibration extracting capability.

7. The micro-sized power source of claim 1 wherein said two dielectric layers comprises a silicon dioxide and silicon nitride.

8. A piezoelectric power generator including:

a piezoelectric panel including a piezoelectric layer in between upper and lower electrode pads;

a cantilever beam from a dielectric frame loosely supporting the piezoelectric panel thereon; and

an end mass formed on the piezoelectric layer, the end mass providing weight to cause the piezoelectric panel to vibrate within the frame and causes the generation of electrical power.

9. The micro-sized power source of claim 8 wherein a movement of the panel within the frame causes a generation of said electrical power, wherein said electrical power is used to power a microelectronic system.

10. The micro-sized power source of claim 8 wherein electrical power is accessed electrically from a connection to the lower electrode pad and upper electrode pad.

11. The micro-sized power source of claim 8 wherein the lower electrode pad and the upper electrode pad comprise at least one of:

platinum, titanium, and chromium.

12. The micro-sized power source of claim 8 wherein the lower electrode pad and upper electrode pad are comprised of a thickness in a range of approximately 100 nm to 400 nm.

13. A method of fabricating a micro-sized power source, comprising:

forming a dielectric frame comprising a silicon wafer positioned between two dielectric layers, said silicon wafer having a top surface and a bottom surface;

etching a window into the bottom surface of the dielectric frame, said window etched at a depth enabling the formation of a panel in the form of a cantilever beam;

forming a bottom electrode pad on the top surface of the dielectric layer of the cantilever beam;

forming a piezoelectric deposition layer over the bottom electrode pad;

forming a top electrode pad over the piezoelectric deposition layer;

forming an end mass at an outer edge over one end of the top electrode;

wherein movement of the cantilever beam by said end mass causes the generation of electrical power from the piezoelectric deposition layer that can be obtained through the bottom and top electrodes.

14. A method of fabricating a micro-sized power source of claim 13 wherein the lower electrode pad and upper electrode pad are comprised of at least one of:

platinum, titanium, and chromium.

15. A method of fabricating a micro-sized power source of claim 13 wherein the lower electrode pad and upper electrode pad are comprised of a thickness in a range of 100 nm to 400 nm.

16. A method of fabricating a micro-sized power source of claim 13 wherein the piezoelectric deposition layer is PZT.