Phase change memory cell and manufacturing method
First Claim
1. A phase change memory cell, the memory cell being a part of a phase change memory device, comprising:
- first and second electrodes;
a phase change element;
at least a section of the phase change element comprising a higher reset transition temperature portion electrically coupling the first and second electrodes and a lower reset transition temperature portion electrically coupling the first and second electrodes; and
the lower reset transition temperature portion comprising a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher reset transition temperature portion.
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Accused Products
Abstract
A phase change memory cell includes first and second electrodes electrically coupled by a phase change element. At least a section of the phase change element comprises a higher reset transition temperature portion and a lower reset transition temperature portion. The lower reset transition temperature portion comprises a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher reset transition temperature portion. The phase change element may comprise an outer, generally tubular, higher reset transition temperature portion surrounding an inner, lower reset transition temperature portion.
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Citations
17 Claims
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1. A phase change memory cell, the memory cell being a part of a phase change memory device, comprising:
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first and second electrodes; a phase change element; at least a section of the phase change element comprising a higher reset transition temperature portion electrically coupling the first and second electrodes and a lower reset transition temperature portion electrically coupling the first and second electrodes; and the lower reset transition temperature portion comprising a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher reset transition temperature portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A phase change memory cell, the memory cell being a part of a phase change memory device, comprising:
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first and second electrodes; a phase change element electrically coupling the first and second electrodes; at least a section of the phase change element comprising a higher reset transition temperature portion and a lower reset transition temperature portion; the lower reset transition temperature portion comprising a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher reset transition temperature portion; and the phase change element comprising an outer, generally tubular portion surrounding an inner portion, the outer portion comprising a higher reset transition temperature portion and the inner portion comprising a lower reset transition temperature portion.
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17. A phase change memory cell, the memory cell being a part of a phase change memory device, comprising:
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first and second electrodes having surfaces spaced apart by a gap; a phase change element positioned between and electrically coupling the first and second electrodes; the phase change element comprising an outer, generally tubular portion surrounding an inner portion, the outer portion comprising a higher reset transition temperature portion and the inner portion comprising a lower reset transition temperature portion, the reset transition temperature of the higher reset transition temperature portion being at least about 100°
C. greater than the reset transition temperature of the lower reset transition temperature portion; andthe lower reset transition temperature portion comprising a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher reset transition temperature portion.
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Specification