×

Phase change memory cell and manufacturing method

  • US 7,688,619 B2
  • Filed: 12/18/2006
  • Issued: 03/30/2010
  • Est. Priority Date: 11/28/2005
  • Status: Active Grant
First Claim
Patent Images

1. A phase change memory cell, the memory cell being a part of a phase change memory device, comprising:

  • first and second electrodes;

    a phase change element;

    at least a section of the phase change element comprising a higher reset transition temperature portion electrically coupling the first and second electrodes and a lower reset transition temperature portion electrically coupling the first and second electrodes; and

    the lower reset transition temperature portion comprising a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher reset transition temperature portion.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×